제조사부품번호

Alliance Memory AS4C16M16SA-6BIN SDRAM 256 MB Surface, 54-Pin 16 bit TFBGA

RS 제품 번호:: 230-8412
Distrelec 제품 번호:: 304-31-274
제조사 부품 번호:: AS4C16M16SA-6BIN
제조업체:: Alliance Memory

Alliance Memory AS4C16M16SA-6BIN SDRAM 256 MB Surface, 54-Pin 16 bit TFBGA

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대량 구매 할인 기용 가능

Subtotal (1 pack of 2 units)*

₩15,923.60

재고있음

278 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
2 - 8	₩7,961.80	₩15,923.60
10 - 18	₩7,717.40	₩15,434.80
20 - 98	₩7,482.40	₩14,964.80
100 - 198	₩7,266.20	₩14,532.40
200 +	₩7,040.60	₩14,081.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 230-8412
Distrelec 제품 번호:: 304-31-274
제조사 부품 번호:: AS4C16M16SA-6BIN
제조업체:: Alliance Memory

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Alliance Memory
	Product Type	SDRAM
	Memory Size	256MB
	Organisation	16M x 16 Bit
	Data Bus Width	16bit
	Address Bus Width	13bit
	Number of Bits per Word	16
	Maximum Clock Frequency	166MHz
	Maximum Random Access Time	5ns
	Number of Words	4M
	Mount Type	Surface
	Package Type	TFBGA
	Minimum Operating Temperature	-40°C
	Pin Count	54
	Maximum Operating Temperature	85°C
	Width	8.1 mm
	Series	AS4C16M16SA-C&I
	Length	8mm
	Height	1.2mm
	Standards/Approvals	No
	Maximum Supply Voltage	3.6V
	Minimum Supply Voltage	3V
	Automotive Standard	No
	Supply Current	60mA

	모두 선택
	브랜드 Alliance Memory
	Product Type SDRAM
	Memory Size 256MB
	Organisation 16M x 16 Bit
	Data Bus Width 16bit
	Address Bus Width 13bit
	Number of Bits per Word 16
	Maximum Clock Frequency 166MHz
	Maximum Random Access Time 5ns
	Number of Words 4M
	Mount Type Surface
	Package Type TFBGA
	Minimum Operating Temperature -40°C
	Pin Count 54
	Maximum Operating Temperature 85°C
	Width 8.1 mm
	Series AS4C16M16SA-C&I
	Length 8mm
	Height 1.2mm
	Standards/Approvals No
	Maximum Supply Voltage 3.6V
	Minimum Supply Voltage 3V
	Automotive Standard No
	Supply Current 60mA

Datasheet - AS4C16M16SA-6BIN

The Alliance Memory 256Mb SDRAM is a high-speed CMOS synchronous DRAM containing 256 Mbits. It is internally configured as 4 Banks of 4M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.

Fast access time from clock: 5/5.4 ns

Fast clock rate: 166/143 MHz

Fully synchronous operation

Internal pipelined architecture

4M word x 16-bit x 4-bank

Alliance Memory AS4C16M16SA-6BIN SDRAM 256 MB Surface, 54-Pin 16 bit TFBGA

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