Alliance Memory AS4C32M16MD1B-5BIN SDRAM 64 MB Surface Mount, 60-Pin 16 bit FBGA
- RS 제품 번호:
- 842-629
- 제조사 부품 번호:
- AS4C32M16MD1B-5BIN
- 제조업체:
- Alliance Memory
N
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 unit)*
₩27,760.00
일시적 품절
- 2027년 3월 16일 부터 배송
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수량 | 한팩당 |
|---|---|
| 1 - 9 | ₩27,760.00 |
| 10 - 49 | ₩27,180.00 |
| 50 - 99 | ₩26,360.00 |
| 100 + | ₩24,700.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 842-629
- 제조사 부품 번호:
- AS4C32M16MD1B-5BIN
- 제조업체:
- Alliance Memory
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Alliance Memory | |
| Memory Size | 64MB | |
| Product Type | SDRAM | |
| Organisation | 32M x 16 bit | |
| Data Bus Width | 16bit | |
| Number of Bits per Word | 16 | |
| Maximum Clock Frequency | 200MHz | |
| Maximum Random Access Time | 5ns | |
| Number of Words | 4 word | |
| Mount Type | Surface Mount | |
| Package Type | FBGA | |
| Pin Count | 60 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 85°C | |
| Standards/Approvals | JEDEC | |
| Series | AS4C32M16MD1B | |
| Maximum Supply Voltage | 1.95V | |
| Automotive Standard | No | |
| Minimum Supply Voltage | 1.7V | |
| 모두 선택 | ||
|---|---|---|
브랜드 Alliance Memory | ||
Memory Size 64MB | ||
Product Type SDRAM | ||
Organisation 32M x 16 bit | ||
Data Bus Width 16bit | ||
Number of Bits per Word 16 | ||
Maximum Clock Frequency 200MHz | ||
Maximum Random Access Time 5ns | ||
Number of Words 4 word | ||
Mount Type Surface Mount | ||
Package Type FBGA | ||
Pin Count 60 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 85°C | ||
Standards/Approvals JEDEC | ||
Series AS4C32M16MD1B | ||
Maximum Supply Voltage 1.95V | ||
Automotive Standard No | ||
Minimum Supply Voltage 1.7V | ||
- COO (Country of Origin):
- TW
The Alliance Memory Mobile DDR SDRAM is a high-performance 512M memory solution designed for efficient operation. Its low voltage and double-data-rate architecture ensure quick data transfers while supporting Advanced power-saving features.
Double-data-rate architecture allows for two data transfers per clock cycle
Low voltage operation enhances power efficiency during use
Built-in Temperature Compensated Self Refresh improves energy savings
Supports various burst lengths and CAS latencies for flexible performance
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