Vishay 45 V 20 A Diode Schottky 3-Pin D2PAK
- RS 제품 번호:
- 768-9278
- 제조사 부품 번호:
- VBT2045BP-E3/4W
- 제조업체:
- Vishay
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대량 구매 할인 기용 가능
Subtotal (1 Bag of 2 units)*
₩3,872.80
일시적 품절
- 2026년 4월 08일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Bag* |
|---|---|---|
| 2 - 12 | ₩1,936.40 | ₩3,872.80 |
| 14 - 24 | ₩1,889.40 | ₩3,778.80 |
| 26 + | ₩1,851.80 | ₩3,703.60 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 768-9278
- 제조사 부품 번호:
- VBT2045BP-E3/4W
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Product Type | Diode | |
| Mount Type | Surface | |
| Package Type | TO-263 | |
| Maximum Continuous Forward Current If | 20A | |
| Peak Reverse Repetitive Voltage Vrrm | 45V | |
| Series | VBTX | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Peak Reverse Current Ir | 30mA | |
| Minimum Operating Temperature | -40°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 160A | |
| Maximum Forward Voltage Vf | 660mV | |
| Maximum Operating Temperature | 150°C | |
| Diameter | 10.45 mm | |
| Standards/Approvals | No | |
| Length | 10.45mm | |
| Height | 4.83mm | |
| Width | 9.14 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Product Type Diode | ||
Mount Type Surface | ||
Package Type TO-263 | ||
Maximum Continuous Forward Current If 20A | ||
Peak Reverse Repetitive Voltage Vrrm 45V | ||
Series VBTX | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Peak Reverse Current Ir 30mA | ||
Minimum Operating Temperature -40°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 160A | ||
Maximum Forward Voltage Vf 660mV | ||
Maximum Operating Temperature 150°C | ||
Diameter 10.45 mm | ||
Standards/Approvals No | ||
Length 10.45mm | ||
Height 4.83mm | ||
Width 9.14 mm | ||
Automotive Standard No | ||
TMBS - Trench MOS Barrier Schottky Rectifiers, Up to 20A, Vishay Semiconductor
The Trench MOS Barrier Schottky (TMBS) Rectifier Series by Vishay contain a patented trench structure. TMBS rectifiers offer several advantages over planar Schottky rectifiers. At operating voltages of 45V and above planar Schottky rectifiers can lose their advantage of fast switching speeds and low forward drop to a significant degree. The patented TMBS structure addresses these issues by diminishing minority carrier injections to the drift region, therefore minimising stored charges and improving switching speeds.
Features
Patented Trench Structure
Improved efficiency in AC/DC Switched mode-power supplies and DC/DC converters
High power density and low forward voltage
Schottky Rectifiers, Vishay Semiconductor
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