Vishay 45 V 40 A Diode Schottky 3-Pin D2PAK
- RS 제품 번호:
- 919-0957
- 제조사 부품 번호:
- VBT4045BP-E3/8W
- 제조업체:
- Vishay
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 reel of 800 units)*
₩1,112,960.00
일시적 품절
- 2026년 4월 07일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 800 - 3200 | ₩1,391.20 | ₩1,113,561.60 |
| 4000 + | ₩1,364.88 | ₩1,091,302.40 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 919-0957
- 제조사 부품 번호:
- VBT4045BP-E3/8W
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Mount Type | Surface | |
| Product Type | Diode | |
| Package Type | TO-263 | |
| Maximum Continuous Forward Current If | 40A | |
| Peak Reverse Repetitive Voltage Vrrm | 45V | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 240A | |
| Minimum Operating Temperature | -40°C | |
| Peak Reverse Current Ir | 85mA | |
| Maximum Forward Voltage Vf | 630mV | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.45mm | |
| Height | 9.14mm | |
| Standards/Approvals | No | |
| Width | 4.83 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Mount Type Surface | ||
Product Type Diode | ||
Package Type TO-263 | ||
Maximum Continuous Forward Current If 40A | ||
Peak Reverse Repetitive Voltage Vrrm 45V | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 240A | ||
Minimum Operating Temperature -40°C | ||
Peak Reverse Current Ir 85mA | ||
Maximum Forward Voltage Vf 630mV | ||
Maximum Operating Temperature 150°C | ||
Length 10.45mm | ||
Height 9.14mm | ||
Standards/Approvals No | ||
Width 4.83 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
TMBS - Trench MOS Barrier Schottky Rectifiers, 30A to 80A, Vishay Semiconductor
The Trench MOS Barrier Schottky (TMBS) Rectifier Series by Vishay contain a patented trench structure. TMBS rectifiers offer several advantages over planar Schottky rectifiers. At operating voltages of 45V and above planar Schottky rectifiers can lose their advantage of fast switching speeds and low forward drop to a significant degree. The patented TMBS structure addresses these issues by diminishing minority carrier injections to the drift region, therefore minimising stored charges and improving switching speeds.
Patented Trench Structure
Improved efficiency in AC/DC Switched mode-power supplies and DC/DC converters
High power density and low forward voltage
Features
Schottky Rectifiers, Vishay Semiconductor
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