Vishay 600 V 25 A Diode Switching 2-Pin TO-247 VS-HFA25PB60-N3
- RS 제품 번호:
- 541-1017
- 제조사 부품 번호:
- VS-HFA25PB60-N3
- 제조업체:
- Vishay
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Subtotal (1 unit)*
₩8,384.80
재고있음
- 9 개 단위 배송 준비 완료
- 추가로 2026년 2월 04일 부터 1,557 개 단위 배송
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수량 | 한팩당 |
|---|---|
| 1 + | ₩8,384.80 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 541-1017
- 제조사 부품 번호:
- VS-HFA25PB60-N3
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Product Type | Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 25A | |
| Peak Reverse Repetitive Voltage Vrrm | 600V | |
| Diode Configuration | Single | |
| Series | VSX | |
| Rectifier Type | Switching | |
| Pin Count | 2 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 225A | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Current Ir | 20μA | |
| Maximum Forward Voltage Vf | 2V | |
| Peak Reverse Recovery Time trr | 75ns | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.3 mm | |
| Length | 15.9mm | |
| Standards/Approvals | RoHS | |
| Height | 20.7mm | |
| Diameter | 20.7 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Product Type Diode | ||
Mount Type Through Hole | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 25A | ||
Peak Reverse Repetitive Voltage Vrrm 600V | ||
Diode Configuration Single | ||
Series VSX | ||
Rectifier Type Switching | ||
Pin Count 2 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 225A | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Current Ir 20μA | ||
Maximum Forward Voltage Vf 2V | ||
Peak Reverse Recovery Time trr 75ns | ||
Maximum Operating Temperature 150°C | ||
Width 5.3 mm | ||
Length 15.9mm | ||
Standards/Approvals RoHS | ||
Height 20.7mm | ||
Diameter 20.7 mm | ||
Automotive Standard No | ||
HEXFRED® Ultrafast Recovery Rectifiers, Vishay Semiconductor
The HEXFRED® range of products from Vishay are ultrafast recovery rectifiers that contain ultrafast Planar technology with a proprietary Schottky barrier based inner structure that enables soft and fast recovery behaviour at any diF/dt condition. These characteristics mean that HEXFRED® products are well suited for use as a companion diode for IGBTs and MOSFETs.
Features
Ultrafast recovery time
Ultrasoft recovery
Very low IRRM
Very low Qrr
Reduced radio frequency interference (RFI) and electromagnetic interference (EMI)
Reduced power loss in diode and switching transistor
Reduced snubbing
Diodes and Rectifiers, Vishay Semiconductor
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