Vishay 1200 V 16 A Diode Switching 2-Pin TO-247 VS-HFA16PB120-N3
- RS 제품 번호:
- 708-4692
- 제조사 부품 번호:
- VS-HFA16PB120-N3
- 제조업체:
- Vishay
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Subtotal (1 unit)*
₩12,596.00
일시적 품절
- 2026년 2월 02일 부터 9 개 단위 배송
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수량 | 한팩당 |
|---|---|
| 1 - 6 | ₩12,596.00 |
| 7 + | ₩12,276.40 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 708-4692
- 제조사 부품 번호:
- VS-HFA16PB120-N3
- 제조업체:
- Vishay
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Mount Type | Through Hole | |
| Product Type | Diode | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 16A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Diode Configuration | Single | |
| Series | VSX | |
| Rectifier Type | Switching | |
| Pin Count | 2 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 190A | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Current Ir | 20μA | |
| Maximum Forward Voltage Vf | 3.93V | |
| Maximum Operating Temperature | 150°C | |
| Peak Reverse Recovery Time trr | 135ns | |
| Height | 20.7mm | |
| Length | 15.87mm | |
| Width | 5.31 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Mount Type Through Hole | ||
Product Type Diode | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 16A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Diode Configuration Single | ||
Series VSX | ||
Rectifier Type Switching | ||
Pin Count 2 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 190A | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Current Ir 20μA | ||
Maximum Forward Voltage Vf 3.93V | ||
Maximum Operating Temperature 150°C | ||
Peak Reverse Recovery Time trr 135ns | ||
Height 20.7mm | ||
Length 15.87mm | ||
Width 5.31 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
HEXFRED® Ultrafast Recovery Rectifiers, Vishay Semiconductor
The HEXFRED® range of products from Vishay are ultrafast recovery rectifiers that contain ultrafast planar technology with a proprietary Schottky barrier based inner structure that enables soft and fast recovery behaviour at any diF/dt condition. These characteristics mean that HEXFRED® products are well suited for use as a companion diode for IGBTs and MOSFETs.
Features
Ultrafast recovery time
Ultrasoft recovery
Very low IRRM
Very low Qrr
Reduced radio frequency interference (RFI) and electromagnetic interference (EMI)
Reduced power loss in diode and switching transistor
Reduced snubbing
Diodes and Rectifiers, Vishay Semiconductor
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