Infineon 650 V 4 A Rectifier & Schottky Diode 5-Pin PG-VSON-4
- RS 제품 번호:
- 258-0965
- 제조사 부품 번호:
- IDL04G65C5XUMA2
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 reel of 3000 units)*
₩4,015,680.00
일시적 품절
- 2026년 11월 02일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 3000 - 3000 | ₩1,338.56 | ₩4,017,936.00 |
| 6000 - 6000 | ₩1,312.24 | ₩3,937,284.00 |
| 9000 + | ₩1,285.92 | ₩3,858,324.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 258-0965
- 제조사 부품 번호:
- IDL04G65C5XUMA2
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Mount Type | Surface | |
| Product Type | Rectifier & Schottky Diode | |
| Package Type | PG-VSON-4 | |
| Maximum Continuous Forward Current If | 4A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | IDL04G65C5 | |
| Diode Configuration | Silicon Carbide Schottky Diode | |
| Pin Count | 5 | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Current Ir | 70μA | |
| Maximum Forward Voltage Vf | 1.7V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | J-STD20 and JESD22 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Mount Type Surface | ||
Product Type Rectifier & Schottky Diode | ||
Package Type PG-VSON-4 | ||
Maximum Continuous Forward Current If 4A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series IDL04G65C5 | ||
Diode Configuration Silicon Carbide Schottky Diode | ||
Pin Count 5 | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Current Ir 70μA | ||
Maximum Forward Voltage Vf 1.7V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals J-STD20 and JESD22 | ||
Automotive Standard No | ||
The Infineon CoolSiC Schottky diodes generation 5 600V, 2 A in a DPAK real2pin package represents our leading edge technology for SiC Schottky barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit.
No reverse recovery charge
Soft switching reverse recovery waveform
Temperature independent switching behaviour
Highly stable switching performance
Reduced cooling requirements
Reduced risks of thermal runaway
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