Infineon 650 V 10 A SiC Schottky Diode Schottky 5-Pin ThinPAK 8x8 IDL10G65C5XUMA2
- RS 제품 번호:
- 244-2890
- 제조사 부품 번호:
- IDL10G65C5XUMA2
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 reel of 3000 units)*
₩10,446,000.00
일시적 품절
- 2027년 7월 30일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 3000 - 3000 | ₩3,482.00 | ₩10,445,400.00 |
| 6000 - 6000 | ₩3,412.00 | ₩10,236,600.00 |
| 9000 + | ₩3,310.00 | ₩9,929,400.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 244-2890
- 제조사 부품 번호:
- IDL10G65C5XUMA2
- 제조업체:
- Infineon
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | SiC Schottky Diode | |
| Package Type | ThinPAK 8x8 | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | 5th Generation thinQ!TM | |
| Rectifier Type | Schottky | |
| Pin Count | 5 | |
| Peak Reverse Current Ir | 180μA | |
| Maximum Forward Voltage Vf | 1.7V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | J-STD20, JESD22 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type SiC Schottky Diode | ||
Package Type ThinPAK 8x8 | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series 5th Generation thinQ!TM | ||
Rectifier Type Schottky | ||
Pin Count 5 | ||
Peak Reverse Current Ir 180μA | ||
Maximum Forward Voltage Vf 1.7V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals J-STD20, JESD22 | ||
Automotive Standard No | ||
The Infineon IDL10G65C5XUMA2 generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new family of products showing improvedefficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf).
Revolutionary semiconductor material - Silicon Carbide
Benchmark switching behavior
No reverse recovery/ No forward recovery
Temperature independent switching behavior
High surge current capability
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC1) for target applications
Breakdown voltage tested at 22 mA2)
Optimized for high temperature operation
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