Infineon 650 V 10 A Diode 2-Pin D2PAK IDK10G65C5XTMA2
- RS 제품 번호:
- 258-0964
- 제조사 부품 번호:
- IDK10G65C5XTMA2
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩6,373.20
재고있음
- 988 개 단위 배송 준비 완료
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수량 | 한팩당 |
|---|---|
| 1 - 9 | ₩6,373.20 |
| 10 - 99 | ₩5,715.20 |
| 100 - 249 | ₩5,546.00 |
| 250 - 499 | ₩4,700.00 |
| 500 + | ₩4,549.60 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 258-0964
- 제조사 부품 번호:
- IDK10G65C5XTMA2
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Mount Type | Surface | |
| Product Type | Diode | |
| Package Type | TO-263 | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | IDK04G65C5 | |
| Pin Count | 2 | |
| Maximum Forward Voltage Vf | 1.8V | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Current Ir | 180μA | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | J-STD20 and JESD22 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Mount Type Surface | ||
Product Type Diode | ||
Package Type TO-263 | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series IDK04G65C5 | ||
Pin Count 2 | ||
Maximum Forward Voltage Vf 1.8V | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Current Ir 180μA | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals J-STD20 and JESD22 | ||
Automotive Standard No | ||
The Infineon 5th generation thinQ! SiC Schottky diode is proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit. The new thinQ!™ generation 5 has been designed to complement our 650V CoolMOS families this ensures meeting the most stringent application requirements in this voltage range.
Revolutionary semiconductor material - Silicon Carbide
Benchmark switching behaviour
No reverse recovery/ No forward recovery
Temperature independent switching behaviour
Enabling higher frequency / increased power density solutions
Higher system reliability due to lower operating temperatures
Reduced EMI
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