제조사부품번호

Infineon 650 V 4 A Diode 2-Pin D2PAK

RS 제품 번호:: 258-0957
제조사 부품 번호:: IDK04G65C5XTMA2
제조업체:: Infineon

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대량 구매 할인 기용 가능

Subtotal (1 reel of 1000 units)*

₩1,321,640.00

일시적 품절

2026년 5월 01일 부터 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	릴당*
1000 - 1000	₩1,321.64	₩1,322,016.00
2000 - 2000	₩1,295.32	₩1,295,696.00
3000 +	₩1,269.00	₩1,269,752.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 258-0957
제조사 부품 번호:: IDK04G65C5XTMA2
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	Diode
	Mount Type	Surface
	Package Type	TO-263
	Maximum Continuous Forward Current If	4A
	Peak Reverse Repetitive Voltage Vrrm	650V
	Series	IDK04G65C5
	Pin Count	2
	Peak Reverse Current Ir	500μA
	Peak Non-Repetitive Forward Surge Current Ifsm	215A
	Maximum Forward Voltage Vf	2.2V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	JEDEC1, RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type Diode
	Mount Type Surface
	Package Type TO-263
	Maximum Continuous Forward Current If 4A
	Peak Reverse Repetitive Voltage Vrrm 650V
	Series IDK04G65C5
	Pin Count 2
	Peak Reverse Current Ir 500μA
	Peak Non-Repetitive Forward Surge Current Ifsm 215A
	Maximum Forward Voltage Vf 2.2V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals JEDEC1, RoHS
	Automotive Standard No

Datasheet - IDK04G65C5XTMA2

The Infineon 5th generation thinQ! SiC Schottky diode is proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit. The new thinQ!™ generation 5 has been designed to complement our 650V CoolMOS families this ensures meeting the most stringent application requirements in this voltage range.

Revolutionary semiconductor material - Silicon Carbide

Benchmark switching behaviour

No reverse recovery/ No forward recovery

Temperature independent switching behaviour

Enabling higher frequency / increased power density solutions

Higher system reliability due to lower operating temperatures

Reduced EMI

Infineon 650 V 4 A Diode 2-Pin D2PAK

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