Infineon 650 V 4 A Diode 2-Pin D2PAK IDK04G65C5XTMA2

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Subtotal (1 pack of 2 units)*

₩5,752.80

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한팩당
한팩당*
2 - 8₩2,876.40₩5,752.80
10 - 98₩2,594.40₩5,188.80
100 - 248₩2,378.20₩4,756.40
250 - 498₩2,077.40₩4,154.80
500 +₩1,870.60₩3,741.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

포장 옵션
RS 제품 번호:
258-0958
제조사 부품 번호:
IDK04G65C5XTMA2
제조업체:
Infineon
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모두 선택

브랜드

Infineon

Mount Type

Surface

Product Type

Diode

Package Type

TO-263

Maximum Continuous Forward Current If

4A

Peak Reverse Repetitive Voltage Vrrm

650V

Series

IDK04G65C5

Pin Count

2

Peak Non-Repetitive Forward Surge Current Ifsm

215A

Peak Reverse Current Ir

500μA

Maximum Forward Voltage Vf

2.2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

JEDEC1, RoHS

Automotive Standard

No

The Infineon 5th generation thinQ! SiC Schottky diode is proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit. The new thinQ!™ generation 5 has been designed to complement our 650V CoolMOS families this ensures meeting the most stringent application requirements in this voltage range.

Revolutionary semiconductor material - Silicon Carbide

Benchmark switching behaviour

No reverse recovery/ No forward recovery

Temperature independent switching behaviour

Enabling higher frequency / increased power density solutions

Higher system reliability due to lower operating temperatures

Reduced EMI

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