Infineon 1200 V 16 A Industrial Power Control Diode Silicon Carbide Schottky Diode Silicon Carbide Schottky Diode 2-Pin
- RS 제품 번호:
- 249-6928
- 제조사 부품 번호:
- IDH16G120C5XKSA1
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 tube of 50 units)*
₩276,736.00
일시적 품절
- 2026년 6월 22일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 50 - 50 | ₩5,534.72 | ₩276,736.00 |
| 100 - 100 | ₩5,423.80 | ₩271,208.80 |
| 150 + | ₩5,314.76 | ₩265,775.60 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 249-6928
- 제조사 부품 번호:
- IDH16G120C5XKSA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | Industrial Power Control Diode Silicon Carbide Schottky Diode | |
| Mount Type | Through Hole | |
| Package Type | PG-TO-220 | |
| Maximum Continuous Forward Current If | 16A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Diode Configuration | Single | |
| Series | IDH16G120C5 | |
| Rectifier Type | Silicon Carbide Schottky Diode | |
| Pin Count | 2 | |
| Peak Reverse Current Ir | 410μA | |
| Maximum Forward Voltage Vf | 2.85V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 140A | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC1 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type Industrial Power Control Diode Silicon Carbide Schottky Diode | ||
Mount Type Through Hole | ||
Package Type PG-TO-220 | ||
Maximum Continuous Forward Current If 16A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Diode Configuration Single | ||
Series IDH16G120C5 | ||
Rectifier Type Silicon Carbide Schottky Diode | ||
Pin Count 2 | ||
Peak Reverse Current Ir 410μA | ||
Maximum Forward Voltage Vf 2.85V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 140A | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC1 | ||
Automotive Standard No | ||
The Infineon schottky diode has silicon carbide material. It does not have reverse recovery current and forward recovery. It has temperature independent switching behaviour. Low forward voltage even at high operating temperature. It has tight forward voltage distribution and excellent thermal performance. It has extended surge current capability.
System efficiency improvement over Si diodes
Enabling higher frequency / increased power density solutions
System size / cost savings due to reduced hea tsink requirements and smaller magnetics
Reduced EMI
Highest efficiency across the entire load range
Robust diode operation during surge events
High reliability
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