ROHM 200 V 1 A Rectifier & Schottky Diode Schottky 2-Pin PMDE RFN1VWM2STR
- RS 제품 번호:
- 246-3938
- 제조사 부품 번호:
- RFN1VWM2STR
- 제조업체:
- ROHM
대량 구매 할인 기용 가능
Subtotal (1 pack of 25 units)*
₩14,523.00
재고있음
- 추가로 2026년 3월 30일 부터 2,850 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 25 - 25 | ₩580.92 | ₩14,513.60 |
| 50 - 75 | ₩564.00 | ₩14,081.20 |
| 100 - 225 | ₩545.20 | ₩13,648.80 |
| 250 - 975 | ₩530.16 | ₩13,254.00 |
| 1000 + | ₩513.24 | ₩12,840.40 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 246-3938
- 제조사 부품 번호:
- RFN1VWM2STR
- 제조업체:
- ROHM
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | ROHM | |
| Product Type | Rectifier & Schottky Diode | |
| Mount Type | Surface, Through Hole | |
| Package Type | PMDE | |
| Maximum Continuous Forward Current If | 1A | |
| Peak Reverse Repetitive Voltage Vrrm | 200V | |
| Diode Configuration | Single | |
| Series | RFN | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Maximum Forward Voltage Vf | 0.93V | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 20A | |
| Maximum Operating Temperature | 175°C | |
| Length | 1.4mm | |
| Standards/Approvals | RoHS | |
| Width | 1 mm | |
| Height | 2.7mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 ROHM | ||
Product Type Rectifier & Schottky Diode | ||
Mount Type Surface, Through Hole | ||
Package Type PMDE | ||
Maximum Continuous Forward Current If 1A | ||
Peak Reverse Repetitive Voltage Vrrm 200V | ||
Diode Configuration Single | ||
Series RFN | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Maximum Forward Voltage Vf 0.93V | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 20A | ||
Maximum Operating Temperature 175°C | ||
Length 1.4mm | ||
Standards/Approvals RoHS | ||
Width 1 mm | ||
Height 2.7mm | ||
Automotive Standard AEC-Q101 | ||
The ROHM RFN series is ultra fast recovery diode which have PMDE package and silicon epitaxial planar structure and can be used in general rectification application.
Low forward voltage
Low switching loss
High current overload capacity
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