ROHM 200 V 1 A Rectifier & Schottky Diode Schottky 2-Pin PMDE RFN1VWM2STR
- RS 제품 번호:
- 246-3938
- 제조사 부품 번호:
- RFN1VWM2STR
- 제조업체:
- ROHM
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대량 구매 할인 기용 가능
Subtotal (1 pack of 25 units)*
₩14,523.00
재고있음
- 2,850 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 25 - 25 | ₩580.92 | ₩14,513.60 |
| 50 - 75 | ₩564.00 | ₩14,081.20 |
| 100 - 225 | ₩545.20 | ₩13,648.80 |
| 250 - 975 | ₩530.16 | ₩13,254.00 |
| 1000 + | ₩513.24 | ₩12,840.40 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 246-3938
- 제조사 부품 번호:
- RFN1VWM2STR
- 제조업체:
- ROHM
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | ROHM | |
| Mount Type | Surface, Through Hole | |
| Product Type | Rectifier & Schottky Diode | |
| Package Type | PMDE | |
| Maximum Continuous Forward Current If | 1A | |
| Peak Reverse Repetitive Voltage Vrrm | 200V | |
| Series | RFN | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 20A | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 0.93V | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.7mm | |
| Length | 1.4mm | |
| Width | 1 mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 ROHM | ||
Mount Type Surface, Through Hole | ||
Product Type Rectifier & Schottky Diode | ||
Package Type PMDE | ||
Maximum Continuous Forward Current If 1A | ||
Peak Reverse Repetitive Voltage Vrrm 200V | ||
Series RFN | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 20A | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 0.93V | ||
Maximum Operating Temperature 175°C | ||
Height 2.7mm | ||
Length 1.4mm | ||
Width 1 mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The ROHM RFN series is ultra fast recovery diode which have PMDE package and silicon epitaxial planar structure and can be used in general rectification application.
Low forward voltage
Low switching loss
High current overload capacity
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