STMicroelectronics 1200 V 20 A Diode 3-Pin D2PAK

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포장 옵션
RS 제품 번호:
228-3058P
제조사 부품 번호:
STPSC20H12G2-TR
제조업체:
STMicroelectronics
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모두 선택

브랜드

STMicroelectronics

Mount Type

Surface

Product Type

Diode

Package Type

TO-263

Maximum Continuous Forward Current If

20A

Peak Reverse Repetitive Voltage Vrrm

1200V

Diode Configuration

Single

Pin Count

3

Peak Reverse Current Ir

60μA

Maximum Forward Voltage Vf

2.25V

Peak Non-Repetitive Forward Surge Current Ifsm

120A

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Height

4.3mm

Length

15.95mm

Standards/Approvals

RoHS

Width

10.58mm

Automotive Standard

No

The STMicroelectronics 20 A, 1200 V SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature.

No or negligible reverse recovery

Switching behaviour independent of temperature

Robust high voltage periphery

Operating Tj from -40 °C to 175 °C

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