제조사부품번호

Infineon 1200 V 20 A SiC Diode Schottky 2-Pin TO-247

RS 제품 번호:: 222-4841
제조사 부품 번호:: IDWD20G120C5XKSA1
제조업체:: Infineon

Infineon 1200 V 20 A SiC Diode Schottky 2-Pin TO-247

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대량 구매 할인 기용 가능

Subtotal (1 tube of 30 units)*

₩220,242.00

재고있음

390 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	Per Tube*
30 - 60	₩7,341.40	₩220,242.00
90 - 120	₩7,153.40	₩214,585.08
150 +	₩7,063.16	₩211,877.88

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 222-4841
제조사 부품 번호:: IDWD20G120C5XKSA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Mount Type	Surface
	Product Type	SiC Diode
	Package Type	TO-247
	Maximum Continuous Forward Current If	20A
	Peak Reverse Repetitive Voltage Vrrm	1200V
	Diode Configuration	Single
	Series	5th Generation CoolSiCTM 1200V
	Rectifier Type	Schottky
	Pin Count	2
	Maximum Forward Voltage Vf	1.65V
	Peak Reverse Current Ir	166μA
	Peak Non-Repetitive Forward Surge Current Ifsm	190A
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Length	40.21mm
	Width	15.8 mm
	Standards/Approvals	JEDEC47/20/22
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Mount Type Surface
	Product Type SiC Diode
	Package Type TO-247
	Maximum Continuous Forward Current If 20A
	Peak Reverse Repetitive Voltage Vrrm 1200V
	Diode Configuration Single
	Series 5th Generation CoolSiCTM 1200V
	Rectifier Type Schottky
	Pin Count 2
	Maximum Forward Voltage Vf 1.65V
	Peak Reverse Current Ir 166μA
	Peak Non-Repetitive Forward Surge Current Ifsm 190A
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Length 40.21mm
	Width 15.8 mm
	Standards/Approvals JEDEC47/20/22
	Automotive Standard No

Datasheet - IDWD20G120C5XKSA1

The Infineon CoolSiC™ Schottky diodes generation 5 1200 V, 20 A in a TO-247 real 2-pin package, for easy exchange of bipolar Si diodes. The expanded 8.7 mm creepage and clearance distances in the new package offer extra safety in high-pollution environments. Combined with a Si IGBT or super-junction MOSFET, for example in a Vienna rectifier stage or PFC boost stage used in 3-phase conversion systems, a CoolSiC™ diode raises efficiency up to 1% compared to next best Si diode alternative.

No reverse recovery current, no forward recovery voltage

Temperature-independent switching behaviour

Low forward voltage even at high operating temperature

Tight forward voltage distribution

High surge current capability

Infineon 1200 V 20 A SiC Diode Schottky 2-Pin TO-247

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