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Infineon 1200 V 30 A SiC Diode Schottky 2-Pin TO-247 IDWD30G120C5XKSA1

RS 제품 번호:: 222-4844
제조사 부품 번호:: IDWD30G120C5XKSA1
제조업체:: Infineon

Infineon 1200 V 30 A SiC Diode Schottky 2-Pin TO-247 IDWD30G120C5XKSA1

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Subtotal (1 unit)*

₩20,022.00

재고있음

50 개 단위 배송 준비 완료

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수량	한팩당
1 - 9	₩20,022.00
10 - 99	₩19,514.40
100 - 249	₩19,025.60
250 - 499	₩18,555.60
500 +	₩18,085.60

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 222-4844
제조사 부품 번호:: IDWD30G120C5XKSA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Mount Type	Surface
	Product Type	SiC Diode
	Package Type	TO-247
	Maximum Continuous Forward Current If	30A
	Peak Reverse Repetitive Voltage Vrrm	1200V
	Series	5th Generation CoolSiC 1200V Schottky Diode
	Diode Configuration	Single
	Rectifier Type	Schottky
	Pin Count	2
	Minimum Operating Temperature	-55°C
	Peak Reverse Current Ir	248μA
	Peak Non-Repetitive Forward Surge Current Ifsm	240A
	Maximum Forward Voltage Vf	1.65V
	Maximum Operating Temperature	175°C
	Length	40.21mm
	Standards/Approvals	JEDEC47/20/22
	Width	15.8 mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Mount Type Surface
	Product Type SiC Diode
	Package Type TO-247
	Maximum Continuous Forward Current If 30A
	Peak Reverse Repetitive Voltage Vrrm 1200V
	Series 5th Generation CoolSiC 1200V Schottky Diode
	Diode Configuration Single
	Rectifier Type Schottky
	Pin Count 2
	Minimum Operating Temperature -55°C
	Peak Reverse Current Ir 248μA
	Peak Non-Repetitive Forward Surge Current Ifsm 240A
	Maximum Forward Voltage Vf 1.65V
	Maximum Operating Temperature 175°C
	Length 40.21mm
	Standards/Approvals JEDEC47/20/22
	Width 15.8 mm
	Automotive Standard No

Datasheet - IDWD30G120C5XKSA1

The Infineon CoolSiC™ Schottky diodes generation 5 1200 V, 30 A is also available in a TO-247 real 2-pin package, for easy exchange of bipolar Si diodes. The expanded 8.7 mm creepage and clearance distances in the new package offer extra safety in high-pollution environments. Combined with a Si IGBT or super-junction MOSFET, for example in a Vienna rectifier stage or PFC boost stage used in 3-phase conversion systems, a CoolSiC™ diode raises efficiency up to 1% compared to next best Si diode alternative.

No reverse recovery current, no forward recovery voltage

Temperature-independent switching behaviour

Low forward voltage even at high operating temperature

Tight forward voltage distribution

High surge current capability

Infineon 1200 V 30 A SiC Diode Schottky 2-Pin TO-247 IDWD30G120C5XKSA1

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