Infineon 1.2 kV 20 A Diode Schottky 3-Pin TO-247 IDW20G120C5BFKSA1
- RS 제품 번호:
- 222-4835
- 제조사 부품 번호:
- IDW20G120C5BFKSA1
- 제조업체:
- Infineon
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대량 구매 할인 받기
90개 더 담고 3% 할인 받기
View bulk pricing optionsSubtotal (1 tube of 30 units)*
₩300,180.00
재고있음
- 150 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tube* | 절감 |
|---|---|---|---|
| 30 - 60 | ₩10,006.00 | ₩300,162.00 | - |
| 90 - 120 | ₩9,620.00 | ₩288,600.00 | 3% |
| 150 + | ₩9,498.00 | ₩284,940.00 | 5% |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 222-4835
- 제조사 부품 번호:
- IDW20G120C5BFKSA1
- 제조업체:
- Infineon
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Mount Type | SMD | |
| Product Type | Diode | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 20A | |
| Peak Reverse Repetitive Voltage Vrrm | 1.2kV | |
| Diode Configuration | Silicon Carbide Schottky Diode | |
| Series | 5th Generation CoolSiCTM | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 2.3V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 190A | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | J-STD20 and JESD22 | |
| Width | 5.21mm | |
| Height | 21.1mm | |
| Length | 16.13mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Mount Type SMD | ||
Product Type Diode | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 20A | ||
Peak Reverse Repetitive Voltage Vrrm 1.2kV | ||
Diode Configuration Silicon Carbide Schottky Diode | ||
Series 5th Generation CoolSiCTM | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 2.3V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 190A | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals J-STD20 and JESD22 | ||
Width 5.21mm | ||
Height 21.1mm | ||
Length 16.13mm | ||
Automotive Standard No | ||
The Infineon CoolSiC™ Schottky diode generation 5 1200 V, 20 A in a TO-247-3 package presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is combined with a merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.
Best-in-class forward voltage (VF)
No reverse recovery charge
Mild positive temperature dependency of VF
Best-in-class surge current capability
Excellent thermal performance
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