STMicroelectronics 650 V 12 A Diode 2-Pin TO-220 STPSC12065D
- RS 제품 번호:
- 201-0889
- 제조사 부품 번호:
- STPSC12065D
- 제조업체:
- STMicroelectronics
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대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩27,542.00
재고있음
- 45 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 10 | ₩5,508.40 | ₩27,542.00 |
| 15 - 20 | ₩5,369.28 | ₩26,846.40 |
| 25 + | ₩5,286.56 | ₩26,432.80 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 201-0889
- 제조사 부품 번호:
- STPSC12065D
- 제조업체:
- STMicroelectronics
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Product Type | Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-220 | |
| Maximum Continuous Forward Current If | 12A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | STPSC12065 | |
| Diode Configuration | Single | |
| Pin Count | 2 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 220A | |
| Maximum Forward Voltage Vf | 1.65V | |
| Peak Reverse Current Ir | 50μA | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.3mm | |
| Standards/Approvals | No | |
| Length | 15.95mm | |
| Width | 10.98 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Product Type Diode | ||
Mount Type Through Hole | ||
Package Type TO-220 | ||
Maximum Continuous Forward Current If 12A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series STPSC12065 | ||
Diode Configuration Single | ||
Pin Count 2 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 220A | ||
Maximum Forward Voltage Vf 1.65V | ||
Peak Reverse Current Ir 50μA | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Height 4.3mm | ||
Standards/Approvals No | ||
Length 15.95mm | ||
Width 10.98 mm | ||
Automotive Standard No | ||
The STMicroelectronics 650V power schottky silicon carbide diode is an ultra high performance power schottky diode. It is manufactured using a silicon carbide substrate. Its high forward surge capability ensures good robustness during transient phases.
No or negligible reverse recovery
Switching behaviour independent of temperature
High forward surge capability
Operating Tj from -40 °C to 175 °C
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