제조사부품번호

onsemi 1.7 kV 35 A Schottky Diode Schottky 2-Pin TO-247

RS 제품 번호:: 195-2483P
제조사 부품 번호:: NDSH25170A
제조업체:: onsemi

onsemi 1.7 kV 35 A Schottky Diode Schottky 2-Pin TO-247

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 받기

15개 더 담고 1% 할인 받기

View bulk pricing options

Subtotal 8 units (supplied in a tube)*

₩220,640.00

일시적 품절

2026년 11월 20일 부터 450 개 단위 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	절감
8 - 14	₩27,580.00	-
15 +	₩27,140.00	1%

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 195-2483P
제조사 부품 번호:: NDSH25170A
제조업체:: onsemi

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	onsemi
	Product Type	Schottky Diode
	Mount Type	Through Hole
	Package Type	TO-247
	Maximum Continuous Forward Current If	35A
	Peak Reverse Repetitive Voltage Vrrm	1.7kV
	Diode Configuration	Single
	Series	EliteSiC
	Rectifier Type	Schottky
	Pin Count	2
	Maximum Forward Voltage Vf	2.8V
	Peak Non-Repetitive Forward Surge Current Ifsm	220A
	Minimum Operating Temperature	-55°C
	Peak Reverse Current Ir	100μA
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Width	4.82mm
	Height	20.82mm
	Length	15.87mm
	Automotive Standard	No

	모두 선택
	브랜드 onsemi
	Product Type Schottky Diode
	Mount Type Through Hole
	Package Type TO-247
	Maximum Continuous Forward Current If 35A
	Peak Reverse Repetitive Voltage Vrrm 1.7kV
	Diode Configuration Single
	Series EliteSiC
	Rectifier Type Schottky
	Pin Count 2
	Maximum Forward Voltage Vf 2.8V
	Peak Non-Repetitive Forward Surge Current Ifsm 220A
	Minimum Operating Temperature -55°C
	Peak Reverse Current Ir 100μA
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Width 4.82mm
	Height 20.82mm
	Length 15.87mm
	Automotive Standard No

Datasheet NDSH25170A

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 25 A, 1700 V, D1, TO-247-2L Silicon Carbide Schottky Diode 1700 V, 25 A

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

Max Junction Temperature

Tj = 175°C

High Surge Current Capacity

Positive Temperature Coefficient

Ease of Paralleling

No Reverse Recovery / No Forward Recovery

Application

SMPS

Solar Inverter

UPS

Power Switching Circuits

onsemi 1.7 kV 35 A Schottky Diode Schottky 2-Pin TO-247

대량 구매 가격 책정 옵션

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 25 A, 1700 V, D1, TO-247-2L Silicon Carbide Schottky Diode 1700 V, 25 A

관련된 링크들