제조사부품번호

onsemi 650 V 10 A Diode Schottky 2-Pin TO-220F

RS 제품 번호:: 178-4444P
제조사 부품 번호:: FFSPF1065A
제조업체:: onsemi

onsemi 650 V 10 A Diode Schottky 2-Pin TO-220F

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

View bulk pricing options

Subtotal 15 units (supplied in a tube)*

₩119,520.00

마지막 RS 재고

최종적인 10 개 unit(s)이 배송 준비 됨

수량	한팩당
15 - 20	₩7,968.00
25 +	₩7,840.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 178-4444P
제조사 부품 번호:: FFSPF1065A
제조업체:: onsemi

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	onsemi
	Product Type	Diode
	Mount Type	Through Hole
	Package Type	TO-220F
	Maximum Continuous Forward Current If	10A
	Peak Reverse Repetitive Voltage Vrrm	650V
	Diode Configuration	Single
	Rectifier Type	Schottky
	Pin Count	2
	Peak Reverse Current Ir	600μA
	Minimum Operating Temperature	-55°C
	Maximum Forward Voltage Vf	1.75V
	Peak Non-Repetitive Forward Surge Current Ifsm	720A
	Maximum Operating Temperature	175°C
	Length	10.16mm
	Diameter	3.18mm
	Height	15.87mm
	Width	4.7mm
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 onsemi
	Product Type Diode
	Mount Type Through Hole
	Package Type TO-220F
	Maximum Continuous Forward Current If 10A
	Peak Reverse Repetitive Voltage Vrrm 650V
	Diode Configuration Single
	Rectifier Type Schottky
	Pin Count 2
	Peak Reverse Current Ir 600μA
	Minimum Operating Temperature -55°C
	Maximum Forward Voltage Vf 1.75V
	Peak Non-Repetitive Forward Surge Current Ifsm 720A
	Maximum Operating Temperature 175°C
	Length 10.16mm
	Diameter 3.18mm
	Height 15.87mm
	Width 4.7mm
	Standards/Approvals No
	Automotive Standard No

Datasheet FFSPF1065A

COO (Country of Origin):: CN

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 650 V, D1, TO-220FP-2L Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 650 V, D1, TO-220F-2L

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

Max Junction Temperature 175 °C

High Surge Current Capacity

Positive Temperature Coefficient

No Reverse Recovery / No Forward Recovery

Applications

PFC

Industrial Power

Solar

EV Charger

UPS

Welding

onsemi 650 V 10 A Diode Schottky 2-Pin TO-220F

대량 구매 가격 책정 옵션

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 650 V, D1, TO-220FP-2L Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 650 V, D1, TO-220F-2L

관련된 링크들