STMicroelectronics 1200 V 10 A Diode Schottky 2-Pin DO-247

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Subtotal 8 units (supplied in a tube)*

₩79,520.00

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한팩당
8 - 14₩9,940.00
15 +₩9,740.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

포장 옵션
RS 제품 번호:
164-7021P
제조사 부품 번호:
STPSC10H12WL
제조업체:
STMicroelectronics
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모두 선택

브랜드

STMicroelectronics

Mount Type

Through Hole

Product Type

Diode

Package Type

DO-247

Maximum Continuous Forward Current If

10A

Peak Reverse Repetitive Voltage Vrrm

1200V

Diode Configuration

Single

Rectifier Type

Schottky

Pin Count

2

Peak Reverse Current Ir

400μA

Maximum Forward Voltage Vf

2.25V

Peak Non-Repetitive Forward Surge Current Ifsm

420A

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Length

16.26mm

Height

21.46mm

Standards/Approvals

No

Automotive Standard

No

The SiC diode, available in TO-220AC, DPAK HV, D²PAK and DO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases

No or negligible reverse recovery

Switching behavior independent of temperature

Robust high voltage periphery

Operating from -40 °C to 175 °C

Low VF

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