onsemi 1.2 kV 10 A Schottky Diode & Rectifier Merged Pin Schottky 3-Pin TO-247-3
- RS 제품 번호:
- 648-526P
- 제조사 부품 번호:
- UJ3D1210KSD
- 제조업체:
- onsemi
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- RS 제품 번호:
- 648-526P
- 제조사 부품 번호:
- UJ3D1210KSD
- 제조업체:
- onsemi
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참조 문서
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Mount Type | Through Hole | |
| Product Type | Schottky Diode & Rectifier | |
| Package Type | TO-247-3 | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 1.2kV | |
| Series | UJ3 | |
| Diode Configuration | 2x Common Cathode Pair | |
| Rectifier Type | Merged Pin Schottky | |
| Pin Count | 3 | |
| Peak Reverse Current Ir | 110μA | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 2.6V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 140A | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | Pb-Free, RoHS | |
| Width | 5.03mm | |
| Height | 20.96mm | |
| Length | 15.9mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Mount Type Through Hole | ||
Product Type Schottky Diode & Rectifier | ||
Package Type TO-247-3 | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 1.2kV | ||
Series UJ3 | ||
Diode Configuration 2x Common Cathode Pair | ||
Rectifier Type Merged Pin Schottky | ||
Pin Count 3 | ||
Peak Reverse Current Ir 110μA | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 2.6V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 140A | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals Pb-Free, RoHS | ||
Width 5.03mm | ||
Height 20.96mm | ||
Length 15.9mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
The ON Semiconductor Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Easy paralleling
Extremely fast switching not dependent on temperature
No reverse or forward recovery
100% UIS tested
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