BGA7L1BN6E6327XTSA1 Infineon, RF Amplifier Low Noise Amplifier, 13.6 dB 960 MHz, 6-Pin TSNP-6-2
- RS 제품 번호:
- 273-5225
- 제조사 부품 번호:
- BGA7L1BN6E6327XTSA1
- 제조업체:
- Infineon
Subtotal (1 reel of 15000 units)*
₩17,596,800.00
현재 액세스할 수 없는 재고 정보
수량 | 한팩당 | 릴당* |
|---|---|---|
| 15000 + | ₩1,173.12 | ₩17,585,520.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 273-5225
- 제조사 부품 번호:
- BGA7L1BN6E6327XTSA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Amplifier Type | Low Noise Amplifier | |
| Typical Power Gain | 13.6 dB | |
| Typical Noise Figure | 0.75dB | |
| Number of Channels per Chip | 1 | |
| Maximum Operating Frequency | 960 MHz | |
| Package Type | TSNP-6-2 | |
| Pin Count | 6 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Amplifier Type Low Noise Amplifier | ||
Typical Power Gain 13.6 dB | ||
Typical Noise Figure 0.75dB | ||
Number of Channels per Chip 1 | ||
Maximum Operating Frequency 960 MHz | ||
Package Type TSNP-6-2 | ||
Pin Count 6 | ||
- COO (Country of Origin):
- MY
The Infineon RF Amplifier is a front end low noise amplifier for LTE which covers a wide frequency range from 716 MHz to 960 MHz. The LNA provides 13.6 dB gain and 0. 75 dB noise figure at a current consumption of 4.9 mA. This RF amplifier is base on Silicon Germanium technology. It operates from 1.5 V to 3.6 V supply voltage. The device features a single line two state control and OFF state can be enabled by powering down Vcc.
Pb free package
RoHS compliant
Low noise figure
Digitally on off switch
Low current consumption
Only 1 external SMD component necessary
RoHS compliant
Low noise figure
Digitally on off switch
Low current consumption
Only 1 external SMD component necessary
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
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