Infineon EB 2ED2410 3M MOSFET Gate Driver for Gate Driver, Power MOSFET for Adjustable Wire Protection
- RS 제품 번호:
- 273-2062
- 제조사 부품 번호:
- EB2ED24103MTOBO1
- 제조업체:
- Infineon
Subtotal (1 unit)*
₩135,717.20
재고있음
- 2 개 단위 배송 준비 완료
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수량 | 한팩당 |
|---|---|
| 1 + | ₩135,717.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 273-2062
- 제조사 부품 번호:
- EB2ED24103MTOBO1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Power Management Function | MOSFET Gate Driver | |
| For Use With | Adjustable Wire Protection | |
| Kit Classification | Evaluation Board | |
| Featured Device | Gate Driver, Power MOSFET | |
| Kit Name | EB 2ED2410 3M | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Power Management Function MOSFET Gate Driver | ||
For Use With Adjustable Wire Protection | ||
Kit Classification Evaluation Board | ||
Featured Device Gate Driver, Power MOSFET | ||
Kit Name EB 2ED2410 3M | ||
273-2062
This evaluation motherboard contains the ISO26262-ready 2ED2410-EM MOSFET gate driver with adjustable I-t wire protection for automotive power distribution with adjustable I-t wire protection. This board is suitable for 12 V and 24 V board nets and contains the OPTIREGTM TLE4296GV50 low drop voltage regulator for providing the 5 V digital supply voltage on this board. With the help of a push button the gate driver can be reset, e.g. from a Safestate mode back to Idle mode or On mode. This board can be used with different daughterboards, which have different OptiMOSTM5 power MOSFET arrangements with and without a dedicated pre-charge path intended for one load channel:
•EB 2ED2410 3D 1BCS:60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common source, 0.5 mOhm shunt
•EB 2ED2410 3D 1BCD:60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common drain, 0.5 mOhm shunt
•EB 2ED2410 3D 1BCSP:60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common source, 0.5 mOhm shunt, with pre-charging
•EB 2ED2410 3D 1BCDP:60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common drain, 0.5 mOhm shunt, with pre-charging
•EB 2ED2410 3D 1BCD:60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common drain, 0.5 mOhm shunt
•EB 2ED2410 3D 1BCSP:60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common source, 0.5 mOhm shunt, with pre-charging
•EB 2ED2410 3D 1BCDP:60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common drain, 0.5 mOhm shunt, with pre-charging
Summary of Features
•Suitable for 12 and 24 V board nets
•Combination with different MOSFET plus shunt daughterboards
•Support of daughterboards with dedicated pre-charge path
•Overcurrent protection with adjustable thresholds
•Adjustable I-t wire protection
•Indicator LEDs
•RESET possibility
•Combination with different MOSFET plus shunt daughterboards
•Support of daughterboards with dedicated pre-charge path
•Overcurrent protection with adjustable thresholds
•Adjustable I-t wire protection
•Indicator LEDs
•RESET possibility
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
관련된 링크들
- Infineon EB 2ED2410 3D 1BCDP MOSFET Gate Driver for Gate Driver, Power MOSFET for 2ED2410-EM 24 V Evaluation Motherboard
- Infineon EB 2ED2410 3D 1BCS MOSFET Gate Driver for Gate Driver, Power MOSFET for 2ED2410-EM 24 V Evaluation Motherboard
- Infineon EB 2ED2410 3D 1BCSP MOSFET Gate Driver for Gate Driver, Power MOSFET for 2ED2410-EM 24 V Evaluation Motherboard
- Infineon EB 2ED2410 3D 1BCD MOSFET Gate Driver for Gate Driver, Power MOSFET for Evaluation Mother/Daughterboards User
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