Infineon EB 2ED2410 3D 1BCS MOSFET Gate Driver for Gate Driver, Power MOSFET for 2ED2410-EM 24 V Evaluation Motherboard
- RS 제품 번호:
- 273-2061
- 제조사 부품 번호:
- EB2ED24103D1BCSTOBO1
- 제조업체:
- Infineon
Subtotal (1 unit)*
₩163,353.20
재고있음
- 추가로 2025년 12월 08일 부터 2 개 단위 배송
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수량 | 한팩당 |
|---|---|
| 1 + | ₩163,353.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 273-2061
- 제조사 부품 번호:
- EB2ED24103D1BCSTOBO1
- 제조업체:
- Infineon
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Power Management Function | MOSFET Gate Driver | |
| For Use With | 2ED2410-EM 24 V Evaluation Motherboard | |
| Kit Classification | Evaluation Board | |
| Featured Device | Gate Driver, Power MOSFET | |
| Kit Name | EB 2ED2410 3D 1BCS | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Power Management Function MOSFET Gate Driver | ||
For Use With 2ED2410-EM 24 V Evaluation Motherboard | ||
Kit Classification Evaluation Board | ||
Featured Device Gate Driver, Power MOSFET | ||
Kit Name EB 2ED2410 3D 1BCS | ||
EiceDRIVER™ APD 2ED2410-EM - 24 V evaluation MOSFET daughterboard, common source
This daughterboard belongs to a family of evaluation boards that can be combined with the 2ED2410-EM 24 V evaluation motherboard (EB 2ED2410 3M). These daughterboards are used to address different MOSFET and shunt arrangements typically found in modern automotive power distributions for 12 and 24 V board nets.
This daughterboard EB 2ED2410 3D 1BCS is addressing one load channel and consisting of two 60 V OptiMOSTM5 power MOSFET(1.1 mOhm) in a back2back common source configuration.
This daughterboard EB 2ED2410 3D 1BCS is addressing one load channel and consisting of two 60 V OptiMOSTM5 power MOSFET(1.1 mOhm) in a back2back common source configuration.
Following other daughterboards are available:
•EB 2ED2410 3D 1BCD: 60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common drain, 0.5 mOhm shunt
•EB 2ED2410 3D 1BCDP: 60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common drain, 0.5 mOhm shunt, with pre-charging
•EB 2ED2410 3D 1BCSP: 60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common source, 0.5 mOhm shunt, with pre-charging
•EB 2ED2410 3D 1BCDP: 60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common drain, 0.5 mOhm shunt, with pre-charging
•EB 2ED2410 3D 1BCSP: 60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common source, 0.5 mOhm shunt, with pre-charging
Summary of Features
•Suitable for 12 and 24 V board nets
•Combination with 2ED2410-EM 24 V evaluation motherboard (EB 2ED2410 3M)
•0.5 mOhm shunt resistor
•60 V OptiMOSTM5 power MOSFET (1,1 Ohm) suitable for 12 and 24 V board nets
•MOSFET temperature monitoring with NTC resistors
•Nominal current up to 20 A continuous or 30 A for 10 min
•Combination with 2ED2410-EM 24 V evaluation motherboard (EB 2ED2410 3M)
•0.5 mOhm shunt resistor
•60 V OptiMOSTM5 power MOSFET (1,1 Ohm) suitable for 12 and 24 V board nets
•MOSFET temperature monitoring with NTC resistors
•Nominal current up to 20 A continuous or 30 A for 10 min
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
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