Infineon EVAL-1ED3142MU12F-SIC IGBT, MOSFET Driver for Gate Driver IC for MOSFET

This board comes pre-populated with two CoolSiC™ MOSFET IMZA120R020M1H, an additional gate driver IC is used for isolated over-current feedback signal from high voltage side to logic control side, fast operational amplifier is used as comparator for over-current detection. It is best suited for double-pulse testing.

1ED3142MU12F belongs to the EiceDRIVER™ Compact 1ED31xx family (X3 compact family). 1ED3142MU12F offers separate sink and source output, accurate and stable timing, active shutdown to ensure a safe power transistor off-state in case the output chip is not connected to the power, short-circuit clamping to limit the gate voltage during short circuit. The driver can operate over a wide supply voltage range, either unipolar or bipolar.

•For use with 650 V/1200 V/1700 V/2300 V/ IGBTs, Si and SiC MOSFETs

•2300 V functional offset voltage capable for selected applications

•Galvanically isolated coreless transformer gate driver

•6.5 A typical sinking and sourcing peak output current

•35 V absolute maximum output supply voltage

•45 ns propagation delay with 20 ns input filter

•High common-mode transient immunity CMTI >300 kV/μs

•Separate source and sink outputs

•Short-circuit clamping and active shutdown

•DSO-8 150 mil narrow-body package

•Tight IC-to-IC propagation delay matching (7 ns max.), tolerance improves application robustness without variations due to aging, current, and temperature

•Suitable for operation at high ambient temperature and in fast switching applications

•UL 1577 VISO = 3.6 kV (rms) for 1 s, 3.0 kV (rms) for 1 min

•Tight propagation delay allows minimum deadtime improving system efficiency and decreasing harmonic distortion

•The precise threshold and timings, combined with UL 1577 certification enable superior application safety

•Motor control and drives

•Photovoltaic

•Server power supplies

•Uninterruptible power supplies (UPS)