OSI Optoelectronics Ultraviolet Photodiode, 65 °, Through Hole Ceramic package
- RS 제품 번호:
- 848-6294
- 제조사 부품 번호:
- PIN-UV-100DQC
- 제조업체:
- OSI Optoelectronics
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
Subtotal (1 unit)*
₩510,763.50
재고있음
- 15 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 |
|---|---|
| 1 + | ₩510,763.50 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 848-6294
- 제조사 부품 번호:
- PIN-UV-100DQC
- 제조업체:
- OSI Optoelectronics
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | OSI Optoelectronics | |
| Spectrums Detected | Ultraviolet | |
| Product Type | Photodiode | |
| Wavelength of Peak Sensitivity | 980nm | |
| Package Type | Ceramic package | |
| Packaging | Tape & Reel | |
| Mount Type | Through Hole | |
| Number of Pins | 2 | |
| Minimum Wavelength Detected | 190nm | |
| Maximum Wavelength Detected | 1100nm | |
| Typical Fall Time | 0.6ns | |
| Amplified | No | |
| Minimum Operating Temperature | -25°C | |
| Maximum Operating Temperature | 85°C | |
| Height | 2.03mm | |
| Standards/Approvals | RoHS | |
| Length | 16.51mm | |
| Width | 14.99mm | |
| Angle of Half Sensitivity | 65 ° | |
| Automotive Standard | No | |
| Typical Rise Time | 0.6ns | |
| Breakdown Voltage | 30V | |
| Polarity | Reverse | |
| Dark Current | 0.2nA | |
| 모두 선택 | ||
|---|---|---|
브랜드 OSI Optoelectronics | ||
Spectrums Detected Ultraviolet | ||
Product Type Photodiode | ||
Wavelength of Peak Sensitivity 980nm | ||
Package Type Ceramic package | ||
Packaging Tape & Reel | ||
Mount Type Through Hole | ||
Number of Pins 2 | ||
Minimum Wavelength Detected 190nm | ||
Maximum Wavelength Detected 1100nm | ||
Typical Fall Time 0.6ns | ||
Amplified No | ||
Minimum Operating Temperature -25°C | ||
Maximum Operating Temperature 85°C | ||
Height 2.03mm | ||
Standards/Approvals RoHS | ||
Length 16.51mm | ||
Width 14.99mm | ||
Angle of Half Sensitivity 65 ° | ||
Automotive Standard No | ||
Typical Rise Time 0.6ns | ||
Breakdown Voltage 30V | ||
Polarity Reverse | ||
Dark Current 0.2nA | ||
OSI UV Enhanced Series Photodiodes
The UV Enhanced series, from OSI Optoelectronics, are a range of UV enhanced silicon photodiodes. This series includes two seperate families of photodiodes, inversion channel and planar diffused. Both of these families are designed for low noise detection in the UV region of the electromagnetic spectrum.
The inversion layer structure family exhibit 100% internal quantum efficiency. Offering high shunt resistance, low noise and high breakdown voltages, this family of photodiodes are idea for low intensity light measurements.
Photodiodes with the planar diffused structure offer a lower capacitance and higher response time compared to the inversion later family. They also show linearity of photocurrent up to higher light input power compared to the inversion layer photodiodes.
Suitable applications for the UV Enhanced series includes; pollution monitoring, medical instrumentation, UV exposure meters, spectroscopy, water purification and fluorescence.
Features of the UV Enhanced series:
Inversion layers or planar diffused silicon photodiodes
Excellent UV response
Photodiodes, OSI Optoelectronics
관련된 링크들
- OSI Optoelectronics UV-035DQC Ultraviolet Photodiode, 65 °, Through Hole Ceramic package
- OSI Optoelectronics PIN-UV-100DQC Ultraviolet Photodiode, 65 °, Through Hole Ceramic package
- OSI Optoelectronics Ultraviolet Photodiode, 65 °, Through Hole TO-8
- OSI Optoelectronics UV-035EQ Ultraviolet Photodiode, 65 °, Through Hole TO-8
- OSI Optoelectronics PIN-RD100 Visible Light Photodiode, 65 °, Through Hole Ceramic package
- OSI Optoelectronics UV-100L Infrared Photodiode, 65 °, Through Hole
- OSI Optoelectronics Infrared Photodiode, 65 °, Surface Mount
- OSI Optoelectronics Infrared Photodiode, 65 °, Through Hole