OSI Optoelectronics UV-100L Infrared Photodiode, 65 °, Through Hole
- RS 제품 번호:
- 176-9786
- 제조사 부품 번호:
- UV-100L
- 제조업체:
- OSI Optoelectronics
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 unit)*
₩640,260.00
일시적 품절
- 2027년 1월 18일 부터 배송
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수량 | 한팩당 |
|---|---|
| 1 - 4 | ₩640,260.00 |
| 5 - 9 | ₩621,040.00 |
| 10 - 24 | ₩599,320.00 |
| 25 + | ₩575,340.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 176-9786
- 제조사 부품 번호:
- UV-100L
- 제조업체:
- OSI Optoelectronics
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | OSI Optoelectronics | |
| Spectrums Detected | Infrared | |
| Product Type | Photodiode | |
| Wavelength of Peak Sensitivity | 254nm | |
| Packaging | Tape & Reel | |
| Mount Type | Through Hole | |
| Number of Pins | 3 | |
| Maximum Wavelength Detected | 254nm | |
| Typical Fall Time | 0.6ns | |
| Minimum Operating Temperature | -25°C | |
| Amplified | No | |
| Maximum Operating Temperature | 85°C | |
| Width | 5mm | |
| Length | 24.76mm | |
| Height | 4.826mm | |
| Standards/Approvals | RoHS | |
| Angle of Half Sensitivity | 65 ° | |
| Diameter | 25.4mm | |
| Automotive Standard | No | |
| Series | UV | |
| Breakdown Voltage | 30V | |
| Typical Rise Time | 5.9ns | |
| Polarity | Forward | |
| Dark Current | 0.5nA | |
| 모두 선택 | ||
|---|---|---|
브랜드 OSI Optoelectronics | ||
Spectrums Detected Infrared | ||
Product Type Photodiode | ||
Wavelength of Peak Sensitivity 254nm | ||
Packaging Tape & Reel | ||
Mount Type Through Hole | ||
Number of Pins 3 | ||
Maximum Wavelength Detected 254nm | ||
Typical Fall Time 0.6ns | ||
Minimum Operating Temperature -25°C | ||
Amplified No | ||
Maximum Operating Temperature 85°C | ||
Width 5mm | ||
Length 24.76mm | ||
Height 4.826mm | ||
Standards/Approvals RoHS | ||
Angle of Half Sensitivity 65 ° | ||
Diameter 25.4mm | ||
Automotive Standard No | ||
Series UV | ||
Breakdown Voltage 30V | ||
Typical Rise Time 5.9ns | ||
Polarity Forward | ||
Dark Current 0.5nA | ||
제외
- COO (Country of Origin):
- US
OSI Optoelectronics offers two distinct families of UV enhanced silicon photodiodes. Inversion channel series and planar diffused series. Both families of devices are especially designed for low noise detection in the UV region of electromagnetic spectrum. Inversion layer structure UV enhanced photodiodes exhibit 100% internal quantum efficiency and are well suited for low intensity light measurements. They have high shunt resistance, low noise and high breakdown voltages. The response uniformity across the surface and quantum efficiency improves with 5 to 10 volts applied reverse bias.
Product Applications
Pollution Monitoring
Medical Instrumentation
UV Exposure Meters
Spectroscopy
Water Purification
Fluorescence
Product Features
Inversion series: 100% Internal QE
Ultra High Shunt Resistance
Excellent UV Response
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