Infineon HEXFET Type N-Channel MOSFET, 30 A, 55 V Enhancement, 3-Pin TO-220

RS 제품 번호:: 919-4898
제조사 부품 번호:: IRLZ34NPBF
제조업체:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 30 A, 55 V Enhancement, 3-Pin TO-220

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대량 구매 할인 기용 가능

Subtotal (1 tube of 50 units)*

₩56,212.00

재고있음

700 개 단위 배송 준비 완료
추가로 2026년 1월 02일 부터 400 개 단위 배송
추가로 2026년 7월 02일 부터 2,000 개 단위 배송

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수량	한팩당	Per Tube*
50 - 50	₩1,124.24	₩56,174.40
100 - 150	₩1,099.80	₩54,952.40
200 +	₩1,075.36	₩53,730.40

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 919-4898
제조사 부품 번호:: IRLZ34NPBF
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	30A
	Maximum Drain Source Voltage Vds	55V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	35mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	68W
	Maximum Gate Source Voltage Vgs	16 V
	Typical Gate Charge Qg @ Vgs	25nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Length	10.54mm
	Height	8.77mm
	Width	4.69 mm
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 30A
	Maximum Drain Source Voltage Vds 55V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 35mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 68W
	Maximum Gate Source Voltage Vgs 16 V
	Typical Gate Charge Qg @ Vgs 25nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Length 10.54mm
	Height 8.77mm
	Width 4.69 mm
	Standards/Approvals No
	Automotive Standard No

COO (Country of Origin):: CN

Infineon HEXFET Series MOSFET, 30A Maximum Continuous Drain Current, 68W Maximum Power Dissipation - IRLZ34NPBF

This high-performance N-channel MOSFET is designed for efficiency in various electronic applications. It has a maximum continuous drain current of 30A and can handle drain-source voltages of up to 55V. The enhanced mode capability ensures operation under various conditions, making it a valuable component for power management across different sectors.

Features & Benefits

• Low on-resistance of 35mΩ reduces power loss

• High power dissipation capability of 68W enhances performance

• Operating temperature range from -55°C to +175°C ensures versatility

• Typical gate charge of 25nC at 5V enables faster switching

• Compact TO-220AB package enables efficient PCB layout

Applications

• Utilised in DC-DC converters for efficient power conversion

• Appropriate for motor driver circuits in industrial automation

• Effective in power management systems for renewable energy

• Used in high-speed switching for telecommunications

What is the maximum gate-source voltage?

The device can withstand a maximum gate-source voltage of ±16V, ensuring safe operation in various circuits.

How does temperature affect its performance?

The MOSFET operates efficiently across a temperature range from -55°C to +175°C, maintaining stability in extreme conditions.

Can it be used in high-frequency applications?

Yes, it is designed with a typical gate charge of 25nC at 5V, making it suitable for high-frequency applications such as RF amplifiers.

What are the implications of low Rds(on)?

A lower Rds(on) value significantly reduces heat generation and power losses, improving overall efficiency in power supply designs.

Is it compatible with various electronic circuits?

This device is versatile and can be integrated into different circuit configurations, including automotive and industrial power electronics.