Infineon HEXFET Type N-Channel MOSFET, 18 A, 55 V Enhancement, 3-Pin TO-220AB IRLZ24NPBF
- RS 제품 번호:
- 541-1231
- 제조사 부품 번호:
- IRLZ24NPBF
- 제조업체:
- Infineon
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Subtotal (1 unit)*
₩1,240.80
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- 2026년 1월 23일 부터 1 개 단위 배송
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- RS 제품 번호:
- 541-1231
- 제조사 부품 번호:
- IRLZ24NPBF
- 제조업체:
- Infineon
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-220AB | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 45W | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Height | 8.77mm | |
| Width | 4.69 mm | |
| Length | 10.54mm | |
| Standards/Approvals | JEDEC TO-220AB, ANSI Y14.5M, 1982 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-220AB | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 45W | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Height 8.77mm | ||
Width 4.69 mm | ||
Length 10.54mm | ||
Standards/Approvals JEDEC TO-220AB, ANSI Y14.5M, 1982 | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 18A Maximum Continuous Drain Current, 45W Maximum Power Dissipation - IRLZ24NPBF
This MOSFET is an essential component for various power applications, known for its efficient performance and robust specifications. Infineon's HEXFET technology ensures precision in electronic designs, making it a popular option in automation and mechanical industries. It effectively controls current flow in devices, significantly impacting modern electrical systems.
Features & Benefits
• Supports a maximum continuous drain current of 18A for high performance
• Operates under a maximum drain-source voltage of 55V for versatile applications
• Low gate threshold voltage minimises energy loss during operation
• Exhibits low drain-source resistance for enhanced efficiency
• Features enhancement mode capability for precise switching
• Can withstand temperatures up to +175°C for functionality under harsh conditions
Applications
• Utilised for power management in industrial automation systems
• Integrated into switching power supplies for optimal performance
• Employed in motor drive circuits for improved control
• Incorporated in various consumer electronics for dependable performance
What are the recommended gate-source voltages for proper operation?
The device can handle a maximum gate-source voltage of -16V to +16V, ensuring stable performance.
Can this component be used in high-temperature environments?
Yes, it operates effectively in temperatures ranging from -55°C to +175°C, suitable for diverse applications.
How does the low Rds(on) impact energy consumption?
A low drain-source resistance minimises power loss, enhancing overall efficiency and reducing heat generation during operation.
What considerations should be made during installation?
Proper attention should be given to the mounting type to ensure secure installation and adequate cooling to prevent overheating.
Is this component compatible with standard TO-220AB packages?
Yes, its design conforms to the TO-220AB standard, facilitating easy integration into existing systems.
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