Infineon HEXFET Type P-Channel MOSFET, 19 A, 55 V Enhancement, 3-Pin TO-220 IRF9Z34NPBF

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RS 제품 번호:
541-0806
Distrelec 제품 번호:
303-41-313
제조사 부품 번호:
IRF9Z34NPBF
제조업체:
Infineon
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모두 선택

브랜드

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

19A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

100mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

35nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

68W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1.6V

Maximum Operating Temperature

175°C

Width

4.69 mm

Standards/Approvals

No

Height

8.77mm

Length

10.54mm

Automotive Standard

No

Distrelec Product Id

30341313

Infineon HEXFET Series MOSFET, 19A Maximum Continuous Drain Current, 68W Maximum Power Dissipation - IRF9Z34NPBF


This P-channel MOSFET is designed for consistent performance across various electronic applications. With a continuous drain current rating of 19A and a drain-source voltage of 55V, it is suitable for automation and power management in modern electronic systems. Its robust thermal characteristics enable operation in challenging environments.

Features & Benefits


• High current capacity meets significant load requirements

• Maximum power dissipation of 68W improves durability

• Enhancement mode design supports efficient switching performance

• Low gate charge allows for quicker operation

• Effective thermal characteristics ensure stable performance at elevated temperatures

• TO-220AB package offers convenient integration into circuits

Applications


• Suitable for power supply circuits prioritising efficiency

• Perfect for motor control in automation systems

• Appropriate for high-frequency switching scenarios

• Employed in power management systems to enhance performance

What is the maximum temperature for this MOSFET?


It can operate at a maximum temperature of +175 °C while maintaining efficiency and reliability.

How does it handle gate-source voltage variations?


It accommodates a maximum gate-source voltage of ±20V, providing flexibility in circuit design.

What is the significance of its low drain-source resistance?


A maximum drain-source resistance of 100 mΩ increases power efficiency and reduces heat production.

Can it be used in high-frequency applications?


Yes, it supports fast switching due to its low gate charge of 35 nC at 10V.

P-Channel Power MOSFET 40V to 55V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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