onsemi Isolated PowerTrench 2 Type P, Type N-Channel MOSFET, 4.5 A, 60 V Enhancement, 8-Pin SOIC FDS4559

RS 제품 번호:: 917-5471
제조사 부품 번호:: FDS4559
제조업체:: onsemi

onsemi Isolated PowerTrench 2 Type P, Type N-Channel MOSFET, 4.5 A, 60 V Enhancement, 8-Pin SOIC FDS4559

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대량 구매 할인 기용 가능

Subtotal (1 pack of 10 units)*

₩11,148.40

공급 부족

140 개 단위 배송 준비 완료
추가로 2026년 1월 06일 부터 6,170 개 단위 배송

당사의 현재 재고는 제한중이며, 제조사측에서는 공급 부족을 예상하고 있습니다.

수량	한팩당	한팩당*
10 - 620	₩1,114.84	₩11,148.40
630 - 1240	₩1,088.52	₩10,885.20
1250 +	₩1,071.60	₩10,716.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 917-5471
제조사 부품 번호:: FDS4559
제조업체:: onsemi

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	onsemi
	Product Type	MOSFET
	Channel Type	Type P, Type N
	Maximum Continuous Drain Current Id	4.5A
	Maximum Drain Source Voltage Vds	60V
	Package Type	SOIC
	Series	PowerTrench
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	55mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	12.5nC
	Forward Voltage Vf	0.8V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	2W
	Transistor Configuration	Isolated
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Length	5mm
	Width	4 mm
	Height	1.5mm
	Number of Elements per Chip	2
	Automotive Standard	No

	모두 선택
	브랜드 onsemi
	Product Type MOSFET
	Channel Type Type P, Type N
	Maximum Continuous Drain Current Id 4.5A
	Maximum Drain Source Voltage Vds 60V
	Package Type SOIC
	Series PowerTrench
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 55mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 12.5nC
	Forward Voltage Vf 0.8V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 2W
	Transistor Configuration Isolated
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Length 5mm
	Width 4 mm
	Height 1.5mm
	Number of Elements per Chip 2
	Automotive Standard No

PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.

The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.

Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

onsemi Isolated PowerTrench 2 Type P, Type N-Channel MOSFET, 4.5 A, 60 V Enhancement, 8-Pin SOIC FDS4559

PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor

MOSFET Transistors, ON Semi

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