onsemi Isolated PowerTrench 2 Type N, Type P-Channel MOSFET, 8.6 A, 30 V Enhancement, 8-Pin SOIC

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

모든 MOSFETs 열람하기
대량 구매 할인 기용 가능

Subtotal (1 reel of 2500 units)*

₩1,602,700.00

Add to Basket
수량 선택 또는 입력
제한된 재고
  • 2,500 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량
한팩당
릴당*
2500 - 2500₩641.08₩1,602,230.00
5000 - 7500₩627.92₩1,569,800.00
10000 +₩614.76₩1,538,780.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
124-1715
제조사 부품 번호:
FDS8858CZ
제조업체:
onsemi
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

onsemi

Product Type

MOSFET

Channel Type

Type N, Type P

Maximum Continuous Drain Current Id

8.6A

Maximum Drain Source Voltage Vds

30V

Series

PowerTrench

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

21mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.8V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

1.6W

Maximum Gate Source Voltage Vgs

25 V

Typical Gate Charge Qg @ Vgs

17nC

Transistor Configuration

Isolated

Maximum Operating Temperature

150°C

Length

5mm

Height

1.5mm

Standards/Approvals

No

Width

4 mm

Number of Elements per Chip

2

Automotive Standard

No

PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor


PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.

The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.

Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

관련된 링크들