IXYS Single X2-Class 1 N-Channel MOSFET, 12 A, 650 V Enhancement, 3-Pin TO-247 IXTH12N65X2

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RS 제품 번호:
917-1457
제조사 부품 번호:
IXTH12N65X2
제조업체:
IXYS
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브랜드

IXYS

Transistor Configuration

Single

Series

X2-Class

Number of Elements per Chip

1

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current (Id)

12 A

Maximum Drain Source Voltage (Vds)

650 V

Channel Mode

Enhancement

Pin Count

3

Package Type

TO-247

Automotive Standard

No

Forward Voltage (Vf)

1.4 V

Height

5.3 mm

Length

16.24 mm

Maximum Drain Source Resistance (Rds)

300 mΩ

Maximum Gate Source Voltage (Vgs)

-30 V, +30 V

Maximum Operating Temperature

150 °C

Maximum Power Dissipation (Pd)

180 W

Minimum Operating Temperature

-55 °C

Mount Type

Through Hole, Through Hole

Standards/Approvals

No

Typical Gate Charge (Qg) @ Vgs

17.7 nC

Width

21.45 mm

N-channel Power MOSFET, IXYS X2-Class Series


The IXYS X2 class Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.

Very low RDS(on) and QG (gate charge)

Intrinsic rectifier diode

Low intrinsic gate resistance

Low package inductance

Industry standard packages

MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

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