IXYS Single X2-Class 1 Type N, Type N-Channel MOSFET, 12 A, 650 V Enhancement, 3-Pin TO-247 IXTH12N65X2
- RS 제품 번호:
- 146-1786
- 제조사 부품 번호:
- IXTH12N65X2
- 제조업체:
- IXYS
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- RS 제품 번호:
- 146-1786
- 제조사 부품 번호:
- IXTH12N65X2
- 제조업체:
- IXYS
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | IXYS | |
| Channel Type | Type N, Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | X2-Class | |
| Package Type | TO-247 | |
| Mount Type | Through Hole, Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 300mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.4V | |
| Maximum Power Dissipation Pd | 180W | |
| Typical Gate Charge Qg @ Vgs | 17.7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Single | |
| Standards/Approvals | No | |
| Width | 21.45 mm | |
| Height | 5.3mm | |
| Length | 16.24mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 IXYS | ||
Channel Type Type N, Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series X2-Class | ||
Package Type TO-247 | ||
Mount Type Through Hole, Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 300mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.4V | ||
Maximum Power Dissipation Pd 180W | ||
Typical Gate Charge Qg @ Vgs 17.7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Single | ||
Standards/Approvals No | ||
Width 21.45 mm | ||
Height 5.3mm | ||
Length 16.24mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- US
N-channel Power MOSFET, IXYS X2-Class Series
The IXYS X2 class Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.
Very low RDS(on) and QG (gate charge)
Intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
관련된 링크들
- IXYS Single X2-Class 1 Type N, Type N-Channel MOSFET, 12 A, 650 V Enhancement, 3-Pin TO-247 IXTH12N65X2
- IXYS X2-Class Type N-Channel MOSFET, 34 A, 650 V Enhancement, 3-Pin TO-247 IXTH34N65X2
- IXYS X2-Class Type N-Channel MOSFET, 48 A, 650 V Enhancement, 3-Pin TO-247 IXTH48N65X2
- IXYS X2-Class Type N-Channel MOSFET, 80 A, 650 V Enhancement, 3-Pin TO-247 IXTH80N65X2
- IXYS X2-Class Type N-Channel MOSFET, 62 A, 650 V Enhancement, 3-Pin TO-247 IXTH62N65X2
- IXYS X2-Class Type N-Channel MOSFET, 80 A, 650 V Enhancement, 3-Pin TO-247
- IXYS X2-Class Type N-Channel MOSFET, 34 A, 650 V Enhancement, 3-Pin TO-247
- IXYS X2-Class Type N-Channel MOSFET, 48 A, 650 V Enhancement, 3-Pin TO-247
