IXYS Single X2-Class 1 Type N, Type N-Channel MOSFET, 12 A, 650 V Enhancement, 3-Pin TO-247 IXTH12N65X2

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Subtotal (1 tube of 30 units)*

₩209,079.00

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수량
한팩당
Per Tube*
30 - 30₩6,969.30₩209,079.00
60 - 90₩6,817.20₩204,533.55
120 +₩6,667.05₩199,993.95

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
146-1786
제조사 부품 번호:
IXTH12N65X2
제조업체:
IXYS
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브랜드

IXYS

Product Type

MOSFET

Channel Type

Type N, Type N

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

650V

Series

X2-Class

Package Type

TO-247

Mount Type

Through Hole, Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

300mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

180W

Forward Voltage Vf

1.4V

Maximum Gate Source Voltage Vgs

30V

Typical Gate Charge Qg @ Vgs

17.7nC

Transistor Configuration

Single

Maximum Operating Temperature

150°C

Length

16.24mm

Height

5.3mm

Width

21.45mm

Standards/Approvals

No

Number of Elements per Chip

1

Automotive Standard

No

COO (Country of Origin):
US

N-channel Power MOSFET, IXYS X2-Class Series


The IXYS X2 class Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.

Very low RDS(on) and QG (gate charge)

Intrinsic rectifier diode

Low intrinsic gate resistance

Low package inductance

Industry standard packages

MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

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