IXYS X2-Class Type N-Channel MOSFET, 80 A, 650 V Enhancement, 3-Pin TO-247 IXTH80N65X2
- RS 제품 번호:
- 917-1435
- Distrelec 제품 번호:
- 302-53-425
- 제조사 부품 번호:
- IXTH80N65X2
- 제조업체:
- IXYS
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Subtotal (1 unit)*
₩17,502.80
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- 13 개 단위 배송 준비 완료
- 추가로 2026년 5월 20일 부터 30 개 단위 배송
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수량 | 한팩당 |
|---|---|
| 1 - 7 | ₩17,502.80 |
| 8 + | ₩17,070.40 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 917-1435
- Distrelec 제품 번호:
- 302-53-425
- 제조사 부품 번호:
- IXTH80N65X2
- 제조업체:
- IXYS
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | X2-Class | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 38mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 137nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 890W | |
| Forward Voltage Vf | 1.4V | |
| Maximum Operating Temperature | 150°C | |
| Width | 21.34 mm | |
| Length | 16.13mm | |
| Standards/Approvals | No | |
| Height | 5.21mm | |
| Automotive Standard | No | |
| Distrelec Product Id | 30253425 | |
| 모두 선택 | ||
|---|---|---|
브랜드 IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series X2-Class | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 38mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 137nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 890W | ||
Forward Voltage Vf 1.4V | ||
Maximum Operating Temperature 150°C | ||
Width 21.34 mm | ||
Length 16.13mm | ||
Standards/Approvals No | ||
Height 5.21mm | ||
Automotive Standard No | ||
Distrelec Product Id 30253425 | ||
N-channel Power MOSFET, IXYS X2-Class Series
The IXYS X2 class Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.
Very low RDS(on) and QG (gate charge)
Intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
관련된 링크들
- IXYS X2-Class Type N-Channel MOSFET, 80 A, 650 V Enhancement, 3-Pin TO-247
- IXYS X2-Class N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-247 IXTH12N65X2
- IXYS X2-Class Type N-Channel MOSFET, 62 A, 650 V Enhancement, 3-Pin TO-247 IXTH62N65X2
- IXYS X2-Class Type N-Channel MOSFET, 48 A, 650 V Enhancement, 3-Pin TO-247 IXTH48N65X2
- IXYS X2-Class Type N-Channel MOSFET, 34 A, 650 V Enhancement, 3-Pin TO-247 IXTH34N65X2
- IXYS X2-Class Type N-Channel MOSFET, 34 A, 650 V Enhancement, 3-Pin TO-247
- IXYS X2-Class Type N-Channel MOSFET, 62 A, 650 V Enhancement, 3-Pin TO-247
- IXYS X2-Class Type N-Channel MOSFET, 48 A, 650 V Enhancement, 3-Pin TO-247
