Wolfspeed C3M Type N-Channel MOSFET, 11.5 A, 900 V Enhancement, 3-Pin TO-247
- RS 제품 번호:
- 915-8842P
- 제조사 부품 번호:
- C3M0280090D
- 제조업체:
- Wolfspeed
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대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal 8 units (supplied in a tube)*
₩84,474.00
단종되는 중
- 최종적인 30 개 unit(s)이 배송 준비 됨
수량 | 한팩당 |
|---|---|
| 8 - 14 | ₩10,559.25 |
| 16 + | ₩10,354.50 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 915-8842P
- 제조사 부품 번호:
- C3M0280090D
- 제조업체:
- Wolfspeed
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Wolfspeed | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 11.5A | |
| Maximum Drain Source Voltage Vds | 900V | |
| Package Type | TO-247 | |
| Series | C3M | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 360mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 9.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 54W | |
| Forward Voltage Vf | 4.4V | |
| Maximum Operating Temperature | 150°C | |
| Length | 16.13mm | |
| Height | 5.21mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Wolfspeed | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 11.5A | ||
Maximum Drain Source Voltage Vds 900V | ||
Package Type TO-247 | ||
Series C3M | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 360mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 9.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 54W | ||
Forward Voltage Vf 4.4V | ||
Maximum Operating Temperature 150°C | ||
Length 16.13mm | ||
Height 5.21mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation