Infineon CoolMOS C3 Type N-Channel MOSFET, 47 A, 650 V Enhancement, 3-Pin TO-247

RS 제품 번호:: 911-4849
제조사 부품 번호:: SPW47N60C3FKSA1
제조업체:: Infineon

Infineon CoolMOS C3 Type N-Channel MOSFET, 47 A, 650 V Enhancement, 3-Pin TO-247

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대량 구매 할인 기용 가능

Subtotal (1 tube of 30 units)*

₩341,389.20

재고있음

추가로 2026년 1월 05일 부터 330 개 단위 배송
추가로 2026년 1월 12일 부터 60 개 단위 배송
추가로 2026년 5월 28일 부터 240 개 단위 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	Per Tube*
30 - 120	₩11,379.64	₩341,372.28
150 +	₩11,037.48	₩331,124.40

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 911-4849
제조사 부품 번호:: SPW47N60C3FKSA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	47A
	Maximum Drain Source Voltage Vds	650V
	Series	CoolMOS C3
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	70mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	252nC
	Maximum Power Dissipation Pd	415W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Width	5.3 mm
	Length	15.9mm
	Height	20.95mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 47A
	Maximum Drain Source Voltage Vds 650V
	Series CoolMOS C3
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 70mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 252nC
	Maximum Power Dissipation Pd 415W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Width 5.3 mm
	Length 15.9mm
	Height 20.95mm
	Automotive Standard No

COO (Country of Origin):: PH

Infineon CoolMOS™ C3 Series MOSFET, 47A Maximum Continuous Drain Current, 415W Maximum Power Dissipation - SPW47N60C3FKSA1

This high-voltage MOSFET is designed for power electronics applications. With its N-channel configuration, it offers consistent performance in various settings. Capable of handling a continuous drain current of 47A, it serves multiple industrial and automation purposes, ensuring reliability and effectiveness in switching tasks.

Features & Benefits

• High performance with a maximum voltage rating of 650V

• Low maximum drain-source resistance of 70mΩ enhances energy efficiency

• Robust power dissipation capability of 415W supports intensive applications

• Channels configured for enhancement mode allow for improved control

• Designed for through-hole mounting for straightforward integration

Applications

• Suitable for energy conversion in renewable energy

• Employed in motor drive circuits for enhanced efficiency

• Used in power management systems for increased stability

What is the optimal temperature range for operating this device?

The device operates efficiently between -55°C and +150°C, enhancing its reliability across varied environments.

How can it integrate into existing electrical systems?

This MOSFET is designed for through-hole mounting, making it compatible with standard PCB layouts for easy integration.

What are the safety considerations when using this component?

It is crucial to ensure the gate-source voltage remains within -20V to +20V to prevent damage during operation and maintain system stability.

What kind of applications require such high power capabilities?

Applications requiring significant power handling, such as motor controls, renewable energy systems, and industrial automation, benefit from its robust power ratings.