Infineon CoolMOS C3 Type N-Channel MOSFET, 20.7 A, 650 V Enhancement, 3-Pin TO-247 SPW20N60C3FKSA1

RS 제품 번호:: 462-3449
제조사 부품 번호:: SPW20N60C3FKSA1
제조업체:: Infineon

Infineon CoolMOS C3 Type N-Channel MOSFET, 20.7 A, 650 V Enhancement, 3-Pin TO-247 SPW20N60C3FKSA1

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Subtotal (1 unit)*

₩7,463.60

재고있음

28 개 단위 배송 준비 완료
추가로 2026년 1월 09일 부터 247 개 단위 배송

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수량	한팩당
1 - 7	₩7,463.60
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RS 제품 번호:: 462-3449
제조사 부품 번호:: SPW20N60C3FKSA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	20.7A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-247
	Series	CoolMOS C3
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	190mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	87nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	208W
	Maximum Operating Temperature	150°C
	Width	5.3 mm
	Height	20.95mm
	Standards/Approvals	No
	Length	15.9mm
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 20.7A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-247
	Series CoolMOS C3
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 190mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 87nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 208W
	Maximum Operating Temperature 150°C
	Width 5.3 mm
	Height 20.95mm
	Standards/Approvals No
	Length 15.9mm
	Automotive Standard AEC-Q101

Infineon CoolMOS™ C3 Series MOSFET, 21A Maximum Continuous Drain Current, 208W Maximum Power Dissipation - SPW20N60C3FKSA1

This MOSFET is vital for numerous electronic applications, engineered to enhance efficiency across various tasks. It performs well in high-power environments, serving the automation, electrical, and mechanical sectors. With durable specifications, it ensures stable performance while managing substantial power loads and optimising energy usage.

Features & Benefits

• N-channel configuration enhances conduction capabilities

• Maximum continuous drain current of 21A supports intensive applications

• High voltage rating of 650V provides reliability in challenging conditions

• Low gate charge facilitates efficient switching, reducing energy losses

• Excellent thermal performance allows operation at elevated temperatures

• Designed for through-hole mounting, simplifying assembly procedures

Applications

• Power supply regulation and management in industrial systems

• Motor control systems for efficient power delivery

• Utilised in DC-DC converters for high voltage

• Integrated into renewable energy systems for effective energy conversion

• Employed in power electronics for improved device performance

What is the maximum operating temperature for this component?

It operates efficiently at a maximum temperature of +150°C, suited for high-temperature environments without compromising performance.

How does the low gate charge benefit device operation?

A low gate charge enables faster switching speeds, significantly reducing switching losses and enhancing overall efficiency during operation.

Can this MOSFET handle repeated high-temperature cycling?

Yes, it is designed to maintain its electrical characteristics over numerous thermal cycles, ensuring longevity in variable temperature environments.

Is there a specific mounting style recommended for this device?

This device is intended for through-hole mounting, facilitating easier PCB assembly and providing stable mechanical connections.

What safety precautions should be taken during installation?

Ensure the gate-source voltage does not exceed specified limits (-20V to +20V) to prevent device damage, and follow standard ESD precautions to avoid static damage.