Infineon HEXFET Type P-Channel MOSFET, 70 A, 55 V Enhancement, 3-Pin TO-263 IRF4905STRLPBF

RS 제품 번호:: 831-2819
제조사 부품 번호:: IRF4905STRLPBF
제조업체:: Infineon

Infineon HEXFET Type P-Channel MOSFET, 70 A, 55 V Enhancement, 3-Pin TO-263 IRF4905STRLPBF

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Subtotal (1 pack of 5 units)*

₩23,293.20

재고있음

195 개 단위 배송 준비 완료
추가로 2026년 1월 01일 부터 14,635 개 단위 배송

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수량	한팩당	한팩당*
5 - 195	₩4,658.64	₩23,293.20
200 - 395	₩4,575.92	₩22,879.60
400 +	₩4,493.20	₩22,466.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 831-2819
제조사 부품 번호:: IRF4905STRLPBF
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	70A
	Maximum Drain Source Voltage Vds	55V
	Package Type	TO-263
	Series	HEXFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	20mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	-1.3V
	Typical Gate Charge Qg @ Vgs	120nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	170W
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Width	9.65 mm
	Length	10.67mm
	Height	4.83mm
	Automotive Standard	No
	Distrelec Product Id	304-44-444

	모두 선택
	브랜드 Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 70A
	Maximum Drain Source Voltage Vds 55V
	Package Type TO-263
	Series HEXFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 20mΩ
	Channel Mode Enhancement
	Forward Voltage Vf -1.3V
	Typical Gate Charge Qg @ Vgs 120nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 170W
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Width 9.65 mm
	Length 10.67mm
	Height 4.83mm
	Automotive Standard No
	Distrelec Product Id 304-44-444

Infineon HEXFET Series MOSFET, 70A Maximum Continuous Drain Current, 170W Maximum Power Dissipation - IRF4905STRLPBF

This high current MOSFET is suitable for various applications within automation and electronics. With a maximum continuous drain current of 70A, it operates at drain-source voltages up to 55V. Its enhancement mode configuration meets performance requirements, while its low RDS(on) maximises energy efficiency. Designed for high power applications, this MOSFET offers thermal stability, making it appropriate for rigorous operating conditions.

Features & Benefits

• Improves system efficiency through low on-resistance values

• Functions effectively within a temperature range of -55°C to +150°C

• Supports fast switching speeds to enhance performance

• Features robust design for repetitive avalanche conditions

• Provided in a D2PAK TO-263 package for straightforward surface mounting

Applications

• Used in power management systems and converters

• Appropriate for motor control requiring high efficiency

• Integrated into switching power supplies for enhanced performance

• Applicable in automotive environments needing dependable control

• Employed in industrial automation requiring substantial power handling

What is the maximum temperature this device can operate at?

The device has a maximum operating temperature of +150°C, ensuring stability under varying environmental conditions.

How does the low RDS(on) benefit circuit design?

Low RDS(on) minimises conduction losses, enhancing overall circuit efficiency and enabling cooler operation.

Can this component handle pulsed currents?

Yes, it is capable of managing pulsed drain currents up to 280 A, making it suitable for dynamic applications.

What are the key parameters for selecting compatible driving voltages?

The gate-to-source voltage should remain within the range of -20 V to +20 V to guarantee effective operation without risk of damage.

Is it suitable for high-frequency switching applications?

The device is designed for fast switching, making it suitable for high-frequency operational functions in electronic circuits.