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Infineon HEXFET Type N-Channel MOSFET, 210 A, 55 V Enhancement, 3-Pin TO-263 IRF3805STRLPBF

RS 제품 번호:: 217-2598
제조사 부품 번호:: IRF3805STRLPBF
제조업체:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 210 A, 55 V Enhancement, 3-Pin TO-263 IRF3805STRLPBF

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Subtotal (1 pack of 5 units)*

₩36,641.20

재고있음

2,260 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
5 - 195	₩7,328.24	₩36,641.20
200 - 395	₩7,147.76	₩35,738.80
400 +	₩7,034.96	₩35,174.80

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 217-2598
제조사 부품 번호:: IRF3805STRLPBF
제조업체:: Infineon

참조 문서

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제품 세부 사항

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	210A
	Maximum Drain Source Voltage Vds	55V
	Series	HEXFET
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	3.3mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	190nC
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	300W
	Maximum Operating Temperature	175°C
	Width	6.22 mm
	Height	2.3mm
	Length	6.5mm
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 210A
	Maximum Drain Source Voltage Vds 55V
	Series HEXFET
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 3.3mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 190nC
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 300W
	Maximum Operating Temperature 175°C
	Width 6.22 mm
	Height 2.3mm
	Length 6.5mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - IRF3805STRLPBF

The Infineon HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead free

Infineon HEXFET Type N-Channel MOSFET, 210 A, 55 V Enhancement, 3-Pin TO-263 IRF3805STRLPBF

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