Infineon OptiMOS P Type P-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin TDSON BSC060P03NS3EGATMA1
- RS 제품 번호:
- 825-9266
- 제조사 부품 번호:
- BSC060P03NS3EGATMA1
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 pack of 10 units)*
₩13,592.40
일시적 품절
- 2026년 6월 01일 부터 배송
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수량 | 한팩당 | 한팩당* |
|---|---|---|
| 10 - 1240 | ₩1,359.24 | ₩13,592.40 |
| 1250 - 2490 | ₩1,323.52 | ₩13,235.20 |
| 2500 + | ₩1,304.72 | ₩13,047.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 825-9266
- 제조사 부품 번호:
- BSC060P03NS3EGATMA1
- 제조업체:
- Infineon
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TDSON | |
| Series | OptiMOS P | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 9.6mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Typical Gate Charge Qg @ Vgs | 61nC | |
| Maximum Power Dissipation Pd | 83W | |
| Forward Voltage Vf | -1.1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 5.35 mm | |
| Height | 1.1mm | |
| Length | 6.35mm | |
| Distrelec Product Id | 304-44-409 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TDSON | ||
Series OptiMOS P | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 9.6mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Typical Gate Charge Qg @ Vgs 61nC | ||
Maximum Power Dissipation Pd 83W | ||
Forward Voltage Vf -1.1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 5.35 mm | ||
Height 1.1mm | ||
Length 6.35mm | ||
Distrelec Product Id 304-44-409 | ||
Automotive Standard No | ||
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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