Infineon OptiMOS P Type P-Channel MOSFET, 1.6 A, 30 V Enhancement, 3-Pin SOT-23 BSS308PEH6327XTSA1

RS 제품 번호:: 823-5500
Distrelec 제품 번호:: 304-44-428
제조사 부품 번호:: BSS308PEH6327XTSA1
제조업체:: Infineon

Infineon OptiMOS P Type P-Channel MOSFET, 1.6 A, 30 V Enhancement, 3-Pin SOT-23 BSS308PEH6327XTSA1

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

View bulk pricing options

Subtotal (1 pack of 50 units)*

₩21,700.00

제한된 재고

추가로 2026년 8월 24일 부터 300 개 단위 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
50 - 700	₩434.00	₩21,660.00
750 - 3700	₩426.00	₩21,280.00
3750 +	₩350.00	₩17,520.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 823-5500
Distrelec 제품 번호:: 304-44-428
제조사 부품 번호:: BSS308PEH6327XTSA1
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	1.6A
	Maximum Drain Source Voltage Vds	30V
	Series	OptiMOS P
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	130mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	5nC
	Maximum Power Dissipation Pd	500mW
	Forward Voltage Vf	-0.8V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	1mm
	Length	2.9mm
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 1.6A
	Maximum Drain Source Voltage Vds 30V
	Series OptiMOS P
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 130mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 5nC
	Maximum Power Dissipation Pd 500mW
	Forward Voltage Vf -0.8V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 1mm
	Length 2.9mm
	Automotive Standard AEC-Q101

Infineon OptiMOS P Series MOSFET, 30V Maximum Drain Source Voltage, 130mΩ Maximum Drain Source Resistance - BSS308PEH6327XTSA1

This MOSFET is a P-channel enhancement device designed for surface-mount switching and control in compact electronic assemblies. It operates across a wide temperature range suitable for demanding environments and is built to function where low-voltage, moderate-current switching is required. The device is supplied in a SOT-23 package and is compatible with automotive-grade applications.

Features and Benefits:

• Low on-resistance of 130 mΩ reduces conduction losses
• Rated for 30V drain-source withstand for low-voltage systems
• Continuous drain current of 1.6A supports moderate loads
• Typical gate charge of 5 nC enables faster gate switching
• Maximum gate-source voltage of 20V allows robust drive margins
• Power dissipation capacity of 500 mW aids thermal management

Applications

• Suitable for load disconnect in 12V automotive systems
• Ideal for battery protection and power-path control
• Used with DC-DC converter input-stage switching
• Can be used for signal-level power switching in modules
• Appropriate for compact surface-mount power boards

What thermal extremes can it tolerate in operation?

It is specified to operate down to -55 °C and up to 150 °C, allowing use in environments with wide thermal variation.

What package and mounting method does it use?

It is supplied in a SOT-23 package designed for surface mounting on PCB assemblies.

How does the device behave regarding gate-drive design?

With a maximum VGS rating of 20V and a typical gate charge of 5 nC, it requires modest drive capability and fast gate drivers to achieve rapid switching.

Is the device suitable for automotive qualification requirements?

It conforms to AEC‑Q101 standards, making it acceptable for many automotive electronic designs.