Infineon StrongIRFET Type N-Channel MOSFET, 195 A, 60 V Enhancement, 3-Pin TO-247 IRFP7530PBF
- RS 제품 번호:
- 820-8855
- 제조사 부품 번호:
- IRFP7530PBF
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 2 units)*
₩11,731.20
재고있음
- 추가로 2025년 12월 29일 부터 10 개 단위 배송
- 추가로 2026년 1월 05일 부터 502 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 2 - 4 | ₩5,865.60 | ₩11,731.20 |
| 6 - 10 | ₩5,724.60 | ₩11,449.20 |
| 12 + | ₩5,630.60 | ₩11,261.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 820-8855
- 제조사 부품 번호:
- IRFP7530PBF
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 195A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | StrongIRFET | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 274nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 341W | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.87mm | |
| Height | 20.7mm | |
| Width | 5.31 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 195A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series StrongIRFET | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 274nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 341W | ||
Maximum Operating Temperature 175°C | ||
Length 15.87mm | ||
Height 20.7mm | ||
Width 5.31 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon StrongIRFET Series MOSFET, 195A Maximum Continuous Drain Current, 341W Maximum Power Dissipation - IRFP7530PBF
This MOSFET is intended for high-performance power management applications, offering features that support a variety of electronic systems. It facilitates efficient energy transfer and minimises power loss, making it a VITAL component in Advanced circuits used in automation and motor control.
Features & Benefits
• Continuous drain current of 195A improves operational efficiency
• Maximum drain-source voltage of 60V accommodates diverse applications
• Low on-resistance of 2mΩ reduces power dissipation
• Withstands extreme temperatures ranging from -55°C to +175°C
• Gate threshold voltage of 2.1V to 3.7V optimises switching performance
• High avalanche and dynamic dV/dt ruggedness enhances reliability
Applications
• Suitable for brushed motor drive
• Used in battery-powered circuits for enhanced efficiency
• Applicable in half-bridge and full-bridge configurations for flexible circuit design
• Effective in synchronous rectifier for improved efficiency
• Utilised in DC/DC and AC/DC converters within power electronics
What are the benefits of using it in high-current applications?
Employing this MOSFET in high-current conditions allows for effective power management while minimising heat generation due to its low on-resistance, thus ensuring stable performance in rigorous operations.
How does temperature affect performance?
Temperature influences operational limits, with a maximum junction temperature of 175°C ensuring functionality under severe conditions. Its thermal resistance properties help maintain reliability in high-temperature environments.
Can it be integrated into existing circuits?
Yes, its standard TO-247 package design permits easy integration into both new and existing circuit layouts, making it suitable for replacements or upgrades across various applications.
What should be considered for effective heat dissipation?
To uphold optimal performance, ensure appropriate cooling mechanisms are in place, as the maximum power dissipation is 341W. The use of heatsinks or fans can assist in managing temperature effectively.
Is it suitable for use in automotive applications?
Yes, its robust specifications meet the requirements of automotive applications, providing a suitable choice in high-temperature and high-power settings.
관련된 링크들
- Infineon StrongIRFET Type N-Channel MOSFET, 195 A, 60 V Enhancement, 3-Pin TO-247
- Infineon StrongIRFET Type N-Channel MOSFET, 195 A, 40 V Enhancement, 3-Pin TO-247 IRFP7430PBF
- Infineon StrongIRFET Type N-Channel MOSFET, 195 A, 60 V Enhancement, 3-Pin TO-220 IRFB7530PBF
- Infineon StrongIRFET Type N-Channel MOSFET, 195 A, 40 V Enhancement, 3-Pin TO-247
- Infineon StrongIRFET Type N-Channel MOSFET, 172 A, 60 V Enhancement, 3-Pin TO-247 IRFP7537PBF
- Infineon StrongIRFET Type N-Channel MOSFET, 195 A, 60 V Enhancement, 3-Pin TO-220
- Infineon StrongIRFET Type N-Channel MOSFET, 172 A, 60 V Enhancement, 3-Pin TO-247
- Infineon StrongIRFET Type N-Channel MOSFET, 195 A, 40 V Enhancement, 3-Pin TO-220 IRFB7430PBF
