Infineon StrongIRFET Type N-Channel MOSFET, 195 A, 60 V Enhancement, 3-Pin TO-247

RS 제품 번호:: 145-9658
제조사 부품 번호:: IRFP7530PBF
제조업체:: Infineon

Infineon StrongIRFET Type N-Channel MOSFET, 195 A, 60 V Enhancement, 3-Pin TO-247

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Subtotal (1 tube of 25 units)*

₩69,936.00

재고있음

500 개 단위 배송 준비 완료

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수량	한팩당	Per Tube*
25 - 100	₩2,797.44	₩69,917.20
125 +	₩2,712.84	₩67,811.60

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 145-9658
제조사 부품 번호:: IRFP7530PBF
제조업체:: Infineon

참조 문서

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	195A
	Maximum Drain Source Voltage Vds	60V
	Package Type	TO-247
	Series	StrongIRFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	2mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	341W
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	274nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Length	15.87mm
	Height	20.7mm
	Width	5.31 mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 195A
	Maximum Drain Source Voltage Vds 60V
	Package Type TO-247
	Series StrongIRFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 2mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 341W
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 274nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Length 15.87mm
	Height 20.7mm
	Width 5.31 mm
	Automotive Standard No

COO (Country of Origin):: MX

Infineon StrongIRFET Series MOSFET, 195A Maximum Continuous Drain Current, 341W Maximum Power Dissipation - IRFP7530PBF

This MOSFET is intended for high-performance power management applications, offering features that support a variety of electronic systems. It facilitates efficient energy transfer and minimises power loss, making it a VITAL component in Advanced circuits used in automation and motor control.

Features & Benefits

• Continuous drain current of 195A improves operational efficiency

• Maximum drain-source voltage of 60V accommodates diverse applications

• Low on-resistance of 2mΩ reduces power dissipation

• Withstands extreme temperatures ranging from -55°C to +175°C

• Gate threshold voltage of 2.1V to 3.7V optimises switching performance

• High avalanche and dynamic dV/dt ruggedness enhances reliability

Applications

• Suitable for brushed motor drive

• Used in battery-powered circuits for enhanced efficiency

• Applicable in half-bridge and full-bridge configurations for flexible circuit design

• Effective in synchronous rectifier for improved efficiency

• Utilised in DC/DC and AC/DC converters within power electronics

What are the benefits of using it in high-current applications?

Employing this MOSFET in high-current conditions allows for effective power management while minimising heat generation due to its low on-resistance, thus ensuring stable performance in rigorous operations.

How does temperature affect performance?

Temperature influences operational limits, with a maximum junction temperature of 175°C ensuring functionality under severe conditions. Its thermal resistance properties help maintain reliability in high-temperature environments.

Can it be integrated into existing circuits?

Yes, its standard TO-247 package design permits easy integration into both new and existing circuit layouts, making it suitable for replacements or upgrades across various applications.

What should be considered for effective heat dissipation?

To uphold optimal performance, ensure appropriate cooling mechanisms are in place, as the maximum power dissipation is 341W. The use of heatsinks or fans can assist in managing temperature effectively.

Is it suitable for use in automotive applications?

Yes, its robust specifications meet the requirements of automotive applications, providing a suitable choice in high-temperature and high-power settings.