Infineon StrongIRFET Type N-Channel MOSFET, 195 A, 60 V Enhancement, 3-Pin TO-220

RS 제품 번호:: 145-9657
제조사 부품 번호:: IRFB7530PBF
제조업체:: Infineon

Infineon StrongIRFET Type N-Channel MOSFET, 195 A, 60 V Enhancement, 3-Pin TO-220

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

Subtotal (1 tube of 50 units)*

₩134,326.00

재고있음

추가로 2025년 12월 29일 부터 850 개 단위 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	Per Tube*
50 - 200	₩2,686.52	₩134,344.80
250 +	₩2,417.68	₩120,921.60

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 145-9657
제조사 부품 번호:: IRFB7530PBF
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	195A
	Maximum Drain Source Voltage Vds	60V
	Package Type	TO-220
	Series	StrongIRFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	2mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	274nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	375W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Height	16.51mm
	Standards/Approvals	No
	Width	4.83 mm
	Length	10.67mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 195A
	Maximum Drain Source Voltage Vds 60V
	Package Type TO-220
	Series StrongIRFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 2mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 274nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 375W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Height 16.51mm
	Standards/Approvals No
	Width 4.83 mm
	Length 10.67mm
	Automotive Standard No

COO (Country of Origin):: MX

Infineon StrongIRFET Series MOSFET, 195A Maximum Continuous Drain Current, 375W Maximum Power Dissipation - IRFB7530PBF

This high current N-channel MOSFET is engineered for a range of power applications. Its Advanced structure allows for efficient switching and notable performance in challenging environments, making it suitable for the automation and electronics sectors, where reliability and robustness are essential for effective functioning in electrical circuits.

Features & Benefits

• Maximum continuous drain current of 195A

• Wide operating temperature range from -55°C to +175°C

• Enhanced durability with robust avalanche and dynamic dV/dt ruggedness

• Fully characterised capacitance and avalanche SOA

• Lead-free and complies with RoHS regulations for environmental safety

Applications

• Used in brushed motor drive

• Appropriate for half-bridge and full-bridge topologies

• Suitable for synchronous rectifier

• Ideal for battery-powered circuits and DC/DC converters

• Engaged in AC/DC and DC/AC inverter systems

What is the maximum gate threshold voltage for this component?

The maximum gate threshold voltage is 3.7V, facilitating efficient operation in various gate drive configurations.

Can this MOSFET operate in high-temperature environments?

Yes, it functions effectively within a temperature range of -55°C to +175°C, making it suitable for harsh conditions.

How does this MOSFET perform in terms of power dissipation?

It allows for a maximum power dissipation of 375 W, ensuring dependable performance under substantial load conditions.

Is it suitable for use in both DC and AC applications?

This component is designed for versatility, providing effective performance in both DC/DC and AC/DC power conversion applications.

What are the implications of its low RDS(on) for circuit design?

A low RDS(on) minimises conduction losses, thereby enhancing overall system efficiency and enabling smaller heat sinks and improved thermal performance in circuit designs.