Vishay TrenchFET Gen III Type P-Channel MOSFET, 35 A, 20 V Enhancement, 8-Pin PowerPAK 1212-8 SIS415DNT-T1-GE3
- RS 제품 번호:
- 814-1304
- 제조사 부품 번호:
- SIS415DNT-T1-GE3
- 제조업체:
- Vishay
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 tape of 20 units)*
₩10,152.00
마지막 RS 재고
- 최종적인 2,880 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | Per Tape* |
|---|---|---|
| 20 - 740 | ₩507.60 | ₩10,170.80 |
| 760 - 1480 | ₩496.32 | ₩9,907.60 |
| 1500 + | ₩481.28 | ₩9,606.80 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 814-1304
- 제조사 부품 번호:
- SIS415DNT-T1-GE3
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 35A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | TrenchFET Gen III | |
| Package Type | PowerPAK 1212-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0095Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 55.5nC | |
| Maximum Power Dissipation Pd | 52W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.4 mm | |
| Height | 0.8mm | |
| Standards/Approvals | RoHS | |
| Length | 3.4mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 35A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series TrenchFET Gen III | ||
Package Type PowerPAK 1212-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0095Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 55.5nC | ||
Maximum Power Dissipation Pd 52W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Operating Temperature 150°C | ||
Width 3.4 mm | ||
Height 0.8mm | ||
Standards/Approvals RoHS | ||
Length 3.4mm | ||
Automotive Standard No | ||
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
관련된 링크들
- Vishay TrenchFET Gen IV Type N-Channel MOSFET, 40 A, 30 V, 8-Pin PowerPAK 1212-8 SIS476DN-T1-GE3
- Vishay TrenchFET Gen IV Type N-Channel MOSFET, 40 A, 30 V, 8-Pin PowerPAK 1212-8
- Vishay TrenchFET Gen III Type P-Channel MOSFET, 127.5 A, 20 V Enhancement, 8-Pin PowerPAK 1212
- Vishay TrenchFET Gen III Type P-Channel MOSFET, 127.5 A, 20 V Enhancement, 8-Pin PowerPAK 1212 SiSS63DN-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET, 18 A, 30 V, 8-Pin PowerPAK 1212-8 SIS413DN-T1-GE3
- Vishay TrenchFET Type N-Channel MOSFET, 42.3 A, 70 V Enhancement, 8-Pin PowerPAK 1212 SiS176LDN-T1-GE3
- Vishay TrenchFET Type N-Channel MOSFET, 45.3 A, 70 V Enhancement, 8-Pin PowerPAK 1212 SiS178LDN-T1-GE3
- Vishay Single TrenchFET Type P-Channel MOSFET, 18 A, 20 V, 8-Pin PowerPAK 1212-8 SIS407ADN-T1-GE3