Vishay TrenchFET Type N-Channel MOSFET, 45.3 A, 70 V Enhancement, 8-Pin PowerPAK 1212 SiS178LDN-T1-GE3
- RS 제품 번호:
- 228-2923
- 제조사 부품 번호:
- SiS178LDN-T1-GE3
- 제조업체:
- Vishay
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 10 units)*
₩12,050.80
마지막 RS 재고
- 최종적인 5,580 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 10 - 40 | ₩1,205.08 | ₩12,050.80 |
| 50 - 90 | ₩1,182.52 | ₩11,825.20 |
| 100 - 240 | ₩1,163.72 | ₩11,637.20 |
| 250 - 990 | ₩1,141.16 | ₩11,411.60 |
| 1000 + | ₩1,120.48 | ₩11,204.80 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 228-2923
- 제조사 부품 번호:
- SiS178LDN-T1-GE3
- 제조업체:
- Vishay
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 45.3A | |
| Maximum Drain Source Voltage Vds | 70V | |
| Package Type | PowerPAK 1212 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 9.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 18.7nC | |
| Maximum Power Dissipation Pd | 39W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 45.3A | ||
Maximum Drain Source Voltage Vds 70V | ||
Package Type PowerPAK 1212 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 9.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 18.7nC | ||
Maximum Power Dissipation Pd 39W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay TrenchFET N-channel is 70 V MOSFET.
100 % Rg and UIS tested
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