제조사부품번호

Vishay TrenchFET Type N-Channel Power MOSFET, 20.5 A, 40 V Enhancement, 8-Pin SOIC SI4124DY-T1-GE3

RS 제품 번호:: 812-3195
제조사 부품 번호:: SI4124DY-T1-GE3
제조업체:: Vishay

Vishay TrenchFET Type N-Channel Power MOSFET, 20.5 A, 40 V Enhancement, 8-Pin SOIC SI4124DY-T1-GE3

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

Subtotal (1 pack of 10 units)*

₩18,499.20

마지막 RS 재고

최종적인 2,200 개 unit(s)이 배송 준비 됨

수량	한팩당	한팩당*
10 +	₩1,849.92	₩18,499.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 812-3195
제조사 부품 번호:: SI4124DY-T1-GE3
제조업체:: Vishay

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	20.5A
	Maximum Drain Source Voltage Vds	40V
	Package Type	SOIC
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.009Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	5.7W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	21nC
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	±20 V
	Maximum Operating Temperature	150°C
	Length	5mm
	Height	1.55mm
	Standards/Approvals	IEC 61249-2-21
	Width	4 mm
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 20.5A
	Maximum Drain Source Voltage Vds 40V
	Package Type SOIC
	Series TrenchFET
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.009Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 5.7W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 21nC
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs ±20 V
	Maximum Operating Temperature 150°C
	Length 5mm
	Height 1.55mm
	Standards/Approvals IEC 61249-2-21
	Width 4 mm
	Automotive Standard No

COO (Country of Origin):: CN

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