Vishay TrenchFET N-Channel Power MOSFET, 20.5 A, 40 V Enhancement, 8-Pin SOIC SI4124DY-T1-GE3
- RS 제품 번호:
- 812-3195
- 제조사 부품 번호:
- SI4124DY-T1-GE3
- 제조업체:
- Vishay
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- RS 제품 번호:
- 812-3195
- 제조사 부품 번호:
- SI4124DY-T1-GE3
- 제조업체:
- Vishay
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참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 20.5A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SOIC | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.009Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 5.7W | |
| Typical Gate Charge Qg @ Vgs | 21nC | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 5mm | |
| Height | 1.55mm | |
| Standards/Approvals | IEC 61249-2-21 | |
| Width | 4mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 20.5A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SOIC | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.009Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 5.7W | ||
Typical Gate Charge Qg @ Vgs 21nC | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 5mm | ||
Height 1.55mm | ||
Standards/Approvals IEC 61249-2-21 | ||
Width 4mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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