onsemi PowerTrench Type N-Channel MOSFET, 6.1 A, 30 V Enhancement, 6-Pin SOT-23 FDC855N
- RS 제품 번호:
- 809-0871
- 제조사 부품 번호:
- FDC855N
- 제조업체:
- onsemi
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- RS 제품 번호:
- 809-0871
- 제조사 부품 번호:
- FDC855N
- 제조업체:
- onsemi
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6.1A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | PowerTrench | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 39mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 9.2nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.6W | |
| Forward Voltage Vf | 0.8V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 1.7 mm | |
| Height | 1mm | |
| Length | 3mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6.1A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series PowerTrench | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 39mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 9.2nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.6W | ||
Forward Voltage Vf 0.8V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 1.7 mm | ||
Height 1mm | ||
Length 3mm | ||
Automotive Standard No | ||
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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